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First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions

文献类型：期刊论文

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作者Wang ZG; Zhang CL; Li JB; Gao F; Weber WJ; Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn
刊名computational materials science ; COMPUTATIONAL MATERIALS SCIENCE
出版日期2010 ; 2010
卷号50期号:2页码:344-348
关键词GaN nanowires Electronic properties First principles GAN NANOWIRES AB-INITIO EMISSION PROPERTIES SEMICONDUCTORS ARRAYS Gan Nanowires Electronic Properties First Principles Gan Nanowires Ab-initio Emission Properties Semiconductors Arrays
ISSN号0927-0256 ; 0927-0256
通讯作者wang, zg, univ elect sci & technol china. , dept appl phys, chengdu 610054, peoples r china. zgwang@uestc.edu.cn
学科主题半导体物理 ; 半导体物理
收录类别SCI
资助信息national natural science foundation of china [10704014]; young scientist foundation of sichuan [09zq026-029]; uestc [jx0731]; chinese academy of sciences ; national science fund for distinguished young scholar ; division of materials sciences and engineering, office of basic energy sciences, us department of energy [de-ac05-76rl01830]
语种英语 ; 英语
资助机构National Natural Science Foundation of China [10704014]; Young Scientist Foundation of Sichuan [09ZQ026-029]; UESTC [JX0731]; Chinese Academy of Sciences ; National Science Fund for Distinguished Young Scholar ; Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, US Department of Energy [DE-AC05-76RL01830]
公开日期2011-07-05 ; 2011-07-15 ; 2011-07-05
附注the electronic properties of hydrogen-saturated gan nanowires with different orientations and sizes are investigated using first principles calculations, and three types of nanowires oriented along the [0 0 1], [1 1 0] and [1 - 1 0] crystal directions are considered. the electronic properties of nanowires in all three directions are extremely similar. all the hydrogen-saturated gan nanowires show semiconducting behavior with a direct band gap larger than that of bulk wurtzite gan. quantum confinement leads to a decrease in the band gap of the nanowires with increasing nanowire size. the [0 0 1]-oriented nanowires with hexagonal cross sections are energetically more favorable than the [1 0 0]- and [1 -1 0]-oriented nanowires with triangular cross sections. (c) 2010 elsevier b.v. all rights reserved.
源URL[http://ir.semi.ac.cn/handle/172111/20933]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn
推荐引用方式
GB/T 7714		 Wang ZG,Zhang CL,Li JB,et al. First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions, First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions[J]. computational materials science, COMPUTATIONAL MATERIALS SCIENCE,2010, 2010,50, 50(2):344-348, 344-348.
APA Wang ZG,Zhang CL,Li JB,Gao F,Weber WJ,&Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn.(2010).First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions.computational materials science,50(2),344-348.
MLA Wang ZG,et al."First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions".computational materials science 50.2(2010):344-348.

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来源：半导体研究所

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