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Origin of ferromagnetism in self-assembled Ga1-xMnxAs quantum dots grown on Si

文献类型：期刊论文

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作者Wang SL; Chen L; Meng KK; Xu PF; Meng HJ; Lu J; Yan WS; Zhao JH; Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jhzhao@red.semi.ac.cn
刊名applied physics letters ; APPLIED PHYSICS LETTERS
出版日期2010 ; 2010
卷号97期号:24页码:article no.242505
关键词MN SEMICONDUCTORS SPINTRONICS ELECTRONICS (GA,MN)AS GAAS Mn Semiconductors Spintronics Electronics Gaas (Ga Mn)As
ISSN号0003-6951 ; 0003-6951
通讯作者zhao, jh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. jhzhao@red.semi.ac.cn
学科主题半导体物理 ; 半导体物理
收录类别SCI
资助信息national natural science foundation of china [60836002, 10920101071]; national basic research of china [2007cb924903]
语种英语 ; 英语
资助机构National Natural Science Foundation of China [60836002, 10920101071]; National Basic Research of China [2007CB924903]
公开日期2011-07-05 ; 2011-07-15 ; 2011-07-05
附注self-assembled ga1-xmnxas magnetic semiconductor quantum dots have been grown on si (001) substrates using droplet epitaxy by molecular-beam epitaxy. structural characterization reveals that these dots possess a zinc-blende lattice. the ga1-xmnxas quantum dots with 8% mn content are ferromagnetically soft and slightly anisotropic at low temperature, and show the superparamagnetic behavior with a blocking temperature of 20 k in the in-plane direction. moreover, the results of x-ray absorption near edge structure provide direct evidences for the substitutional mn2+ ion with a half-filled d(5) configuration for the ga site, suggesting the hole-mediated ferromagnetism in zero-dimensional ga1-xmnxas quantum dots. (c) 2010 american institute of physics. [doi:10.1063/1.3526378]
源URL[http://ir.semi.ac.cn/handle/172111/20937]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jhzhao@red.semi.ac.cn
推荐引用方式
GB/T 7714		 Wang SL,Chen L,Meng KK,et al. Origin of ferromagnetism in self-assembled Ga1-xMnxAs quantum dots grown on Si, Origin of ferromagnetism in self-assembled Ga1-xMnxAs quantum dots grown on Si[J]. applied physics letters, APPLIED PHYSICS LETTERS,2010, 2010,97, 97(24):article no.242505, Article no.242505.
APA Wang SL.,Chen L.,Meng KK.,Xu PF.,Meng HJ.,...&Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jhzhao@red.semi.ac.cn.(2010).Origin of ferromagnetism in self-assembled Ga1-xMnxAs quantum dots grown on Si.applied physics letters,97(24),article no.242505.
MLA Wang SL,et al."Origin of ferromagnetism in self-assembled Ga1-xMnxAs quantum dots grown on Si".applied physics letters 97.24(2010):article no.242505.

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来源：半导体研究所

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