中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
First principles study of p-type doping in SiC nanowires: role of quantum effect

文献类型:期刊论文

;
作者Wang ZG; Xue SW; Li JB; Gao F
刊名journal of nanoparticle research ; JOURNAL OF NANOPARTICLE RESEARCH
出版日期2011 ; 2011
卷号13期号:7页码:2887-2892
关键词SiC nanowires Sic Nanowires P-type Doping First Principles Modeling And Simulation p-type doping First principles Modeling and simulation
合作状况国际
英文摘要Using first principles density functional theory calculations, we investigated the X and X-N-X (X = Al and Ga) doped 3C-SiC nanowires grown along the [111] crystal direction with diameter of 1.00 and 1.33 nm. We found that the ionization energy of acceptor state is much larger in nanowires than that in the bulk SiC as a result of quantum confinement effect. Simulation results show that the reduced dimensionality in p-type SiC nanowires strongly reduces the capability of the materials to generate free carriers. It is also found that X-N-X (X = Al and Ga) complexes are energetically favored to form in the materials and have lower ionization energy than single doping. It is confirm that codoping is more suitable method for achieving low-resistivity semiconductors either in nano materials or bulk material.
学科主题半导体物理 ; 半导体物理
收录类别SCI
语种英语 ; 英语
公开日期2011-07-07 ; 2011-07-15 ; 2011-07-07
源URL[http://ir.semi.ac.cn/handle/172111/21401]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Wang ZG,Xue SW,Li JB,et al. First principles study of p-type doping in SiC nanowires: role of quantum effect, First principles study of p-type doping in SiC nanowires: role of quantum effect[J]. journal of nanoparticle research, JOURNAL OF NANOPARTICLE RESEARCH,2011, 2011,13, 13(7):2887-2892, 2887-2892.
APA Wang ZG,Xue SW,Li JB,&Gao F.(2011).First principles study of p-type doping in SiC nanowires: role of quantum effect.journal of nanoparticle research,13(7),2887-2892.
MLA Wang ZG,et al."First principles study of p-type doping in SiC nanowires: role of quantum effect".journal of nanoparticle research 13.7(2011):2887-2892.

入库方式: OAI收割

来源:半导体研究所

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