First principles study of p-type doping in SiC nanowires: role of quantum effect
文献类型:期刊论文
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作者 | Wang ZG; Xue SW; Li JB![]() |
刊名 | journal of nanoparticle research
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出版日期 | 2011 ; 2011 |
卷号 | 13期号:7页码:2887-2892 |
关键词 | SiC nanowires Sic Nanowires P-type Doping First Principles Modeling And Simulation p-type doping First principles Modeling and simulation |
合作状况 | 国际 |
英文摘要 | Using first principles density functional theory calculations, we investigated the X and X-N-X (X = Al and Ga) doped 3C-SiC nanowires grown along the [111] crystal direction with diameter of 1.00 and 1.33 nm. We found that the ionization energy of acceptor state is much larger in nanowires than that in the bulk SiC as a result of quantum confinement effect. Simulation results show that the reduced dimensionality in p-type SiC nanowires strongly reduces the capability of the materials to generate free carriers. It is also found that X-N-X (X = Al and Ga) complexes are energetically favored to form in the materials and have lower ionization energy than single doping. It is confirm that codoping is more suitable method for achieving low-resistivity semiconductors either in nano materials or bulk material. |
学科主题 | 半导体物理 ; 半导体物理 |
收录类别 | SCI |
语种 | 英语 ; 英语 |
公开日期 | 2011-07-07 ; 2011-07-15 ; 2011-07-07 |
源URL | [http://ir.semi.ac.cn/handle/172111/21401] ![]() |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Wang ZG,Xue SW,Li JB,et al. First principles study of p-type doping in SiC nanowires: role of quantum effect, First principles study of p-type doping in SiC nanowires: role of quantum effect[J]. journal of nanoparticle research, JOURNAL OF NANOPARTICLE RESEARCH,2011, 2011,13, 13(7):2887-2892, 2887-2892. |
APA | Wang ZG,Xue SW,Li JB,&Gao F.(2011).First principles study of p-type doping in SiC nanowires: role of quantum effect.journal of nanoparticle research,13(7),2887-2892. |
MLA | Wang ZG,et al."First principles study of p-type doping in SiC nanowires: role of quantum effect".journal of nanoparticle research 13.7(2011):2887-2892. |
入库方式: OAI收割
来源:半导体研究所
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