Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers
文献类型：期刊论文
| 作者 | Yu F
|
| 刊名 | acta physica sinica
 |
| 出版日期 | 2011 |
| 卷号 | 60期号:5页码:article no.56104 |
| 关键词 | separation by oxygen implantation buried oxide nitrogen implantation positive charge density RADIATION HARDNESS IMPLANTING NITROGEN ION-IMPLANTATION IMPROVEMENT TECHNOLOGY OXYGEN LAYER |
| ISSN号 | 1000-3290 |
| 通讯作者 | zheng, zs, univ jinan, dept phys, jinan 250022, peoples r china. zszheng513@163.com |
| 学科主题 | 微电子学 |
| 收录类别 | SCI |
| 资助信息 | doctoral foundation of university of jinan ; shanghai municipal education commission [08yz156] |
| 语种 | 中文 |
| 公开日期 | 2011-07-06 ; 2011-07-15 |
| 附注 | the influence of nitrogen implantation on the properties of silicon-on-insulator buried oxide using separation by oxygen implantation was studied. nitrogen ions were implanted into the buried oxide layer with a high-dose of 10(16) cm(-2). the experimental results showed that the positive charge density of the nitrogen-implanted buried oxide was obviously increased, compared with the control sampes without nitrogen implantation. it was also found that the post-implantation annealing caused an additional increase of the positive charge density in the nitrogen implanted samples. however, annealing time displayed a small effect on the positive charge density of the nitrogen implanted buried oxide, compared with the significant increase induced by nitrogen implantation. moreover, the capacitance-voltage results showed that the positive charge density of the unannealed sample with nitrogen implanted is approximately equal to that of the sample annealed at 1100 degrees c for 2.5 h in n-2 ambient, despite an additional increase brought with annealing, and the buried oxide of the sample after 0.5 h annealing has a maximum value of positive charge density. according to the simulating results, the nitrogen implantation resulted in a heavy damage to the buried oxide, a lot of silicon and oxygen vacancies were introduced in the buried oxide during implantation. however, the fourier transform infrared spectroscopy of the samples indicates that implantation induced defects can be basically eliminated after an annealing at 1100 degrees c for 0.5 h. the increase of the positive charge density of the nitrogen implanted buried oxide is ascribed to the accumulation of implanted nitrogen near the interface of buried oxide and silicon, which caused the break of weak si - si bonds and the production of positive silicon ions in the silicon-rich region of the buried oxide near the interface, and this conclusion is supported by the results of secondary ion mass spectrometry. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21325]  |
| 专题 | 半导体研究所_半导体集成技术工程研究中心 |
| 推荐引用方式 GB/T 7714 | Yu F. Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers[J]. acta physica sinica,2011,60(5):article no.56104. |
| APA | Yu F.(2011).Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers.acta physica sinica,60(5),article no.56104. |
| MLA | Yu F."Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers".acta physica sinica 60.5(2011):article no.56104. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。