Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model
文献类型：期刊论文
| 作者 | Yu X ; Gu YX ; Wang Q ; Wei X ; Chen LH |
| 刊名 | chinese physics b
 |
| 出版日期 | 2011 |
| 卷号 | 20期号:3页码:article no.30507 |
| 关键词 | type-II 'W' quantum well Burt-Foreman Hamiltonian finite element methods LASERS ALLOYS |
| ISSN号 | 1674-1056 |
| 通讯作者 | wang, q, chinese acad sci, inst semicond, nanooptoelect lab, beijing 100083, peoples r china. wangqing@mail.semi.ac.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china [60636030] |
| 语种 | 英语 |
| 公开日期 | 2011-07-06 ; 2011-07-15 |
| 附注 | in this paper, we present an investigation of type-ii 'w' quantum wells for the inas/ga1-xinxsb/alsb family, where 'w' denotes the conduction profile of the material. we focus our attention on using the eight-band k center dot p model to calculate the band structures within the framework of finite element method. for the sake of clarity, the simulation in this paper is simplified and based on only one period -alsb/inas/ga1-xinxsb/inas/aisb. the obtained numerical results include the energy levels and wavefunctions of carriers. we discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either in as or ga1-xinxsb layer and the alloy composition in ga1-xinxsb separately. in the last part, in order to compare the eight-band k center dot p model, we recalculate the conduction bands of the 'w' structure using the one-band k center dot p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. the in-plane energy dispersions, which illustrate the suppression of the auger recombination process, are also obtained. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21339]  |
| 专题 | 半导体研究所_纳米光电子实验室 |
| 推荐引用方式 GB/T 7714 | Yu X,Gu YX,Wang Q,et al. Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model[J]. chinese physics b,2011,20(3):article no.30507. |
| APA | Yu X,Gu YX,Wang Q,Wei X,&Chen LH.(2011).Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model.chinese physics b,20(3),article no.30507. |
| MLA | Yu X,et al."Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model".chinese physics b 20.3(2011):article no.30507. |
入库方式： OAI收割
来源：半导体研究所
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