Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers
文献类型：期刊论文
| 作者 | Cui K ; Wei Y; Huo YH; Zhang YH
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 98期号:10页码:article no.103501 |
| ISSN号 | 0003-6951 |
| 通讯作者 | ma, wq, chinese acad sci, inst semicond, lab nanooptoelect, pob 912, beijing 100083, peoples r china. wqma@semi.ac.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | china's national 973 research programme [2010cb327602]; natural science fund for innovative research group [61021003] |
| 语种 | 英语 |
| 公开日期 | 2011-07-06 ; 2011-07-15 |
| 附注 | we report a two-color quantum dot infrared photodetector (qdip) using double tunneling barriers (dtbs) on one side of the ingaas/algaas dots. the two-color detection is achieved by changing the polarity of the applied bias voltages. in contrast, the same qdip structure without the dtbs does not exhibit this detection wavelength tunability by switching the bias polarity. the two-color detection is ascribed to a different escape mechanism of electrons between positive and negative biases. the electrons escape out of the quantum well through resonant tunneling for a positive bias voltage while tunnel through a triangular barrier for a negative bias voltage. (c) 2011 american institute of physics. [doi:10.1063/1.3561777] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21347]  |
| 专题 | 半导体研究所_纳米光电子实验室 |
| 推荐引用方式 GB/T 7714 | Cui K,Wei Y,Huo YH,et al. Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers[J]. applied physics letters,2011,98(10):article no.103501. |
| APA | Cui K,Wei Y,Huo YH,&Zhang YH.(2011).Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers.applied physics letters,98(10),article no.103501. |
| MLA | Cui K,et al."Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers".applied physics letters 98.10(2011):article no.103501. |
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来源：半导体研究所
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