Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers
文献类型：期刊论文
| 作者 | Wei Y ; Huo YH; Zhang YH; Huang JL; Ma WQ; Cui K
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 98期号:10页码:article no.103507 |
| 关键词 | MU-M DETECTOR TEMPERATURE GROWTH |
| ISSN号 | 0003-6951 |
| 通讯作者 | ma, wq, chinese acad sci, inst semicond, lab nanooptoelect, pob 912, beijing 100083, peoples r china. wqma@semi.ac.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | china's national 973 research programme [2010cb327602]; natural science fund for innovative research group [61021003] |
| 语种 | 英语 |
| 公开日期 | 2011-07-06 ; 2011-07-15 |
| 附注 | we report a modified dots-in-a-well (dwell) infrared photodetector by inserting some very thin gaas or algaas layers into the inas dots. the photoluminescence (pl) measurements indicate that the modified dwell structure with the insertion layers (ils) of gaas has a larger peak intensity and a narrower pl linewidth than that without the ils. for the modified dwell detector with algaas ils, the peak detection wavelength reaches very long infrared window of 14.1 mu m. the peak detectivity d* is 1.1 x 10(8) cm hz(1/2)/w at 77 k under normal incidence infrared irradiation. (c) 2011 american institute of physics. [doi:10.1063/1.3563709] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21349]  |
| 专题 | 半导体研究所_纳米光电子实验室 |
| 推荐引用方式 GB/T 7714 | Wei Y,Huo YH,Zhang YH,et al. Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers[J]. applied physics letters,2011,98(10):article no.103507. |
| APA | Wei Y,Huo YH,Zhang YH,Huang JL,Ma WQ,&Cui K.(2011).Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers.applied physics letters,98(10),article no.103507. |
| MLA | Wei Y,et al."Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers".applied physics letters 98.10(2011):article no.103507. |
入库方式： OAI收割
来源：半导体研究所
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