Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors
文献类型：期刊论文
| 作者 | Wang YB ; Xu Y ; Zhang Y ; Yu X ; Song GF ; Chen LH |
| 刊名 | chinese physics b
 |
| 出版日期 | 2011 |
| 卷号 | 20期号:6页码:art. no. 067302 |
| 关键词 | InAs/GaSb superlattices p-doping concentration electrical and optical properties |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-07-07 ; 2011-07-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21399]  |
| 专题 | 半导体研究所_纳米光电子实验室 |
| 推荐引用方式 GB/T 7714 | Wang YB,Xu Y,Zhang Y,et al. Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors[J]. chinese physics b,2011,20(6):art. no. 067302. |
| APA | Wang YB,Xu Y,Zhang Y,Yu X,Song GF,&Chen LH.(2011).Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors.chinese physics b,20(6),art. no. 067302. |
| MLA | Wang YB,et al."Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors".chinese physics b 20.6(2011):art. no. 067302. |
入库方式： OAI收割
来源：半导体研究所
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