Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
文献类型：期刊论文
| 作者 | Li GK
|
| 刊名 | rare metals
 |
| 出版日期 | 2011 |
| 卷号 | 30期号:3页码:247-251 |
| ISSN号 | 1001-0521 |
| 关键词 | vanadium dioxide infrared transition diffraction effect dual ion beam sputtering annealing |
| 通讯作者 | liang, jr, tianjin univ, sch elect & informat technol, tianjin 300072, peoples r china. liang_jiran@tju.edu.cn |
| 学科主题 | 半导体材料 |
| 资助信息 | national high-tech research and development program of china [2008aa031401]; national natural science foundation of china [60771019]; natural science foundation of tianjin, china [08jczd-jc17500]; state key lab on integrated optoelectronics [2010kfb001]; research fund for the doctoral program of higher education of china [20100032120029] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. x-ray diffraction (xrd), atom force microscopy (afm), and fourier transform infrared spectrum (ftir) were employed to measure the crystalline structure, surface morphology, and infrared optical transmittance. the phase transition properties were characterized by transmittance. the results show that the annealed vanadium oxide thin film is composed of monoclinic vo2, with preferred orientation of (011). the maximum of transmittance change is beyond 65% as the temperature increases from 20 to 80a degrees c. the reversible changes in optical transmittance against temperature were observed. the change rate of transmittance at short wavelength is higher than that at long wavelength at the same temperature across semiconductor-metal phase transition. this phenomenon was discussed using diffraction effect. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20941]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Li GK. Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition[J]. rare metals,2011,30(3):247-251. |
| APA | Li GK.(2011).Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition.rare metals,30(3),247-251. |
| MLA | Li GK."Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition".rare metals 30.3(2011):247-251. |
入库方式： OAI收割
来源：半导体研究所
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