The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys
文献类型：期刊论文
| 作者 | Su SJ ; Wang W ; Cheng BW ; Hu WX ; Zhang GZ ; Xue CL ; Zuo YH ; Wang QM |
| 刊名 | solid state communications
 |
| 出版日期 | 2011 |
| 卷号 | 151期号:8页码:647-650 |
| 关键词 | Semiconductors Raman scattering MOLECULAR-BEAM EPITAXY RAMAN FREQUENCIES SEMICONDUCTORS GE(001)2X1 SILICON SCATTERING GROWTH |
| ISSN号 | 0038-1098 |
| 通讯作者 | cheng, bw, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. cbw@semi.ac.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national basic research program of china [2007cb613404]; national natural science foundation of china [60906035, 61036003, 51072194] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | strained and relaxed ge1-xsnx alloys grown on si(001) substrates by molecular beam epitaxy have been studied by raman scattering. the compositional dependence of the ge-ge raman mode has been measured to be delta omega(x) = -30.3x cm(-1) for the strained alloys while it is delta omega(x) = -83.1x cm(-1) for the relaxed ones, which are in good agreement with theoretical predictions. the results clearly show that, with the increase of sn concentration, the ge-ge phonon frequency decreases much more slowly in the strained alloys than in the relaxed ones. (c) 2011 elsevier ltd. all rights reserved. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20967]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Su SJ,Wang W,Cheng BW,et al. The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys[J]. solid state communications,2011,151(8):647-650. |
| APA | Su SJ.,Wang W.,Cheng BW.,Hu WX.,Zhang GZ.,...&Wang QM.(2011).The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys.solid state communications,151(8),647-650. |
| MLA | Su SJ,et al."The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys".solid state communications 151.8(2011):647-650. |
入库方式： OAI收割
来源：半导体研究所
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