Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing
文献类型：期刊论文
| 作者 | Wang W ; Su SJ ; Zheng J ; Zhang GZ ; Xue CL ; Zuo YH ; Cheng BW ; Wang QM |
| 刊名 | applied surface science
 |
| 出版日期 | 2011 |
| 卷号 | 257期号:9页码:4468-4471 |
| 关键词 | Germanium tin alloys Germanium buffer Surface morphology evolution Mass transport SURFACE GROWTH EVOLUTION DECAY |
| ISSN号 | 0169-4332 |
| 通讯作者 | cheng, bw, pob 912, beijing 100083, peoples r china. cbw@semi.ac.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national high technology research and development program of china [2006aa03z415]; national basic research program of china [2007cb613404]; national natural science foundation [60906035] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | epitaxial ge1-xsnx alloys were grown on si(1 0 0) by mbe with a ge buffer layer. the ge buffer was grown by two step method using geh4 as gas source. the epitaxial layers were characterized by rutherford backscattering spectrometry (rbs), double crystal x-ray diffraction (dcxrd), and atomic force microscopy (afm) measurements. then the ge1-xsnx alloys were annealed at 500 degrees c for times ranging from 0 to 10 min. during the annealing process, the surface morphology evolution, from three-dimensional round mounds to nearly two-dimensional ripples, and finally to flat, was observed. this result can be attributed to mass transport by surface diffusion. (c) 2010 elsevier b. v. all rights reserved. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20973]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang W,Su SJ,Zheng J,et al. Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing[J]. applied surface science,2011,257(9):4468-4471. |
| APA | Wang W.,Su SJ.,Zheng J.,Zhang GZ.,Xue CL.,...&Wang QM.(2011).Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing.applied surface science,257(9),4468-4471. |
| MLA | Wang W,et al."Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing".applied surface science 257.9(2011):4468-4471. |
入库方式： OAI收割
来源：半导体研究所
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