Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays
文献类型:期刊论文
作者 | Liu JQ ; Wang JF ; Gong XJ ; Huang J ; Xu K ; Zhou TF ; Zhong HJ ; Qiu YX ; Cai DM ; Ren GQ ; Yang H |
刊名 | applied physics express
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出版日期 | 2011 |
卷号 | 4期号:4页码:article no.45001 |
关键词 | OUTPUT VOLTAGE NANOWIRES NANOGENERATORS GROWTH |
ISSN号 | 1882-0778 |
通讯作者 | xu, k, chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215123, peoples r china. kxu2006@sinano.ac.cn |
学科主题 | 光电子学 |
收录类别 | SCI |
资助信息 | national natural science foundation of china [60776003, 10704052, 50902101, 50902099, 10904106]; national basic research program of china (973 program) [2007cb936700]; chinese academy of sciences [yz200939] |
语种 | 英语 |
公开日期 | 2011-07-05 ; 2011-07-15 |
附注 | gan nanopyramid (np) arrays have been fabricated by a convenient electrodeless photoelectrochemical etching method. transmission electron microscopy measurement indicates that these nps are composed of crystalline gan surrounding a dislocation. high-resolution x-ray diffraction and the micro-raman spectrum reveal a highly compressive stress relaxation in the nps compared with compressed gan subfilm. additionally, negative piezoelectric current pluses are generated from the gan nps when the conductive atomic force microscope scans cross the arrays in the contact mode. the result demonstrates that the gan np arrays are a promising candidate for nanogenerators. (c) 2011 the japan society of applied physics |
源URL | [http://ir.semi.ac.cn/handle/172111/20975] ![]() |
专题 | 半导体研究所_集成光电子学国家重点实验室 |
推荐引用方式 GB/T 7714 | Liu JQ,Wang JF,Gong XJ,et al. Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays[J]. applied physics express,2011,4(4):article no.45001. |
APA | Liu JQ.,Wang JF.,Gong XJ.,Huang J.,Xu K.,...&Yang H.(2011).Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays.applied physics express,4(4),article no.45001. |
MLA | Liu JQ,et al."Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays".applied physics express 4.4(2011):article no.45001. |
入库方式: OAI收割
来源:半导体研究所
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