中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays

文献类型:期刊论文

作者Liu JQ ; Wang JF ; Gong XJ ; Huang J ; Xu K ; Zhou TF ; Zhong HJ ; Qiu YX ; Cai DM ; Ren GQ ; Yang H
刊名applied physics express
出版日期2011
卷号4期号:4页码:article no.45001
关键词OUTPUT VOLTAGE NANOWIRES NANOGENERATORS GROWTH
ISSN号1882-0778
通讯作者xu, k, chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215123, peoples r china. kxu2006@sinano.ac.cn
学科主题光电子学
收录类别SCI
资助信息national natural science foundation of china [60776003, 10704052, 50902101, 50902099, 10904106]; national basic research program of china (973 program) [2007cb936700]; chinese academy of sciences [yz200939]
语种英语
公开日期2011-07-05 ; 2011-07-15
附注gan nanopyramid (np) arrays have been fabricated by a convenient electrodeless photoelectrochemical etching method. transmission electron microscopy measurement indicates that these nps are composed of crystalline gan surrounding a dislocation. high-resolution x-ray diffraction and the micro-raman spectrum reveal a highly compressive stress relaxation in the nps compared with compressed gan subfilm. additionally, negative piezoelectric current pluses are generated from the gan nps when the conductive atomic force microscope scans cross the arrays in the contact mode. the result demonstrates that the gan np arrays are a promising candidate for nanogenerators. (c) 2011 the japan society of applied physics
源URL[http://ir.semi.ac.cn/handle/172111/20975]  
专题半导体研究所_集成光电子学国家重点实验室
推荐引用方式
GB/T 7714
Liu JQ,Wang JF,Gong XJ,et al. Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays[J]. applied physics express,2011,4(4):article no.45001.
APA Liu JQ.,Wang JF.,Gong XJ.,Huang J.,Xu K.,...&Yang H.(2011).Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays.applied physics express,4(4),article no.45001.
MLA Liu JQ,et al."Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays".applied physics express 4.4(2011):article no.45001.

入库方式: OAI收割

来源:半导体研究所

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