Deep Energy Levels Formed by Se Implantation in Si
文献类型：期刊论文
| 作者 | Han PD
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 28期号:3页码:article no.36108 |
| ISSN号 | 0256-307x |
| 关键词 | SILICON PHOTODETECTOR |
| 通讯作者 | han, pd, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. pdhan@semi.ac.cn |
| 学科主题 | 光电子学 |
| 资助信息 | national natural science foundation of china [60776046, 60976046, 60837001, 61021003]; national basic research program of china [2006cb302802, 2010cb933800] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | to transfer a photon with a 1.55 mu m wavelength into an electron in an integrated optoelectronic silicon waveguide detector, selenium-doped silicon with deep energy levels is used. the deep levels in the silicon with implanted selenium are studied. three levels are observed and their captured cross sections, concentrations and in-depth profiles are measured. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20989]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Han PD. Deep Energy Levels Formed by Se Implantation in Si[J]. chinese physics letters,2011,28(3):article no.36108. |
| APA | Han PD.(2011).Deep Energy Levels Formed by Se Implantation in Si.chinese physics letters,28(3),article no.36108. |
| MLA | Han PD."Deep Energy Levels Formed by Se Implantation in Si".chinese physics letters 28.3(2011):article no.36108. |
入库方式： OAI收割
来源：半导体研究所
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