Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix
文献类型：期刊论文
| 作者 | Song C ; Rui YJ ; Wang QB ; Xu J ; Li W ; Chen KJ ; Zuo YH ; Wang QM |
| 刊名 | journal of alloys and compounds
 |
| 出版日期 | 2011 |
| 卷号 | 509期号:9页码:3963-3966 |
| 关键词 | Silicon carbide Thin films Crystal structure Electronic properties THIN-FILMS SILICON PHOTOLUMINESCENCE SUPERLATTICE ALLOYS |
| ISSN号 | 0925-8388 |
| 通讯作者 | xu, j, nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china. junxu@nju.edu.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | 973 project [2007cb613401]; nsf of china [61036001, 10874070]; nsf of jiangsu province [bk2010010] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | si-rich hydrogenated amorphous silicon carbide thin films were prepared by plasma-enhanced chemical vapor deposition technique. as-deposited films were subsequently annealed at 900 degrees c and 1000 degrees c to form si nanocrystals embedded in amorphous sic matrix. raman spectra demonstrate the formation of si nanocrystals with size around 7-9 nm. for the sample annealed at 1000 degrees c, the crystallinity can be reached to 70%. as increasing the annealing temperature, the dark conductivity is increased accompanying with the increase of crystallinity of the film. the dark conductivity reaches to 1.2 x 10(-6) scm(-1) for the sample annealed at 1000 degrees c, which is 4 orders of magnitude higher than that of as-deposited film. it is found that the carrier transport process is dominated by the thermally activated transport process according to the temperature-dependent conductivity results. (c) 2011 elsevier b. v. all rights reserved. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20991]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Song C,Rui YJ,Wang QB,et al. Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix[J]. journal of alloys and compounds,2011,509(9):3963-3966. |
| APA | Song C.,Rui YJ.,Wang QB.,Xu J.,Li W.,...&Wang QM.(2011).Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix.journal of alloys and compounds,509(9),3963-3966. |
| MLA | Song C,et al."Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix".journal of alloys and compounds 509.9(2011):3963-3966. |
入库方式： OAI收割
来源：半导体研究所
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