Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector
文献类型：期刊论文
| 作者 | Cai LE ; Zhang BP ; Zhang JY ; Wu CM ; Jiang F ; Hu XL ; Chen M ; Wang QM |
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2010 |
| 卷号 | 43期号:1页码:289-292 |
| 关键词 | DIODES |
| ISSN号 | 1386-9477 |
| 通讯作者 | zhang, bp, xiamen univ, dept phys, lab micro nano optoelect, xiamen 361005, peoples r china. bzhang@xmu.edu.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national high technology research and development program of china [2006aa03z409]; national science foundation of china [60876007, 10974165]; xiamen municipal science and technology bureau [2006aa03z110] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | gan-based light-emitting devices (leds) with and without a rear distributed bragg reflector (dbr) were grown by metal-organic chemical vapor deposition. the integrated electroluminescence (el) intensity of led with a rear nitride dbr showed a super-linear increase up to a current density of 135 a/cm(2) and the relative external quantum efficiency (eqe) kept monotonously increasing with increase in injection current density. for the led without a rear dbr, however, the emission efficiency reached the maximum at a very low current density of 10 a/cm(2). the improvement is mainly attributed to reflection of light from the dbr to the "top side" and decrease in light absorption in the active region with increase in injection current density. moreover, the improvement in relative eqe was attributed to the resonant cavity enhancing spontaneous emission at its resonant wavelength too. crown copyright (c) 2010 published by elsevier b.v. all rights reserved. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21001]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Cai LE,Zhang BP,Zhang JY,et al. Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector[J]. physica e-low-dimensional systems & nanostructures,2010,43(1):289-292. |
| APA | Cai LE.,Zhang BP.,Zhang JY.,Wu CM.,Jiang F.,...&Wang QM.(2010).Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector.physica e-low-dimensional systems & nanostructures,43(1),289-292. |
| MLA | Cai LE,et al."Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector".physica e-low-dimensional systems & nanostructures 43.1(2010):289-292. |
入库方式： OAI收割
来源：半导体研究所
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