Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Su SJ ; Wang W ; Zhang GZ ; Hu WX ; Bai AQ ; Xue CL ; Zuo YH ; Cheng BW ; Wang QM |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2011 |
| 卷号 | 60期号:2页码:article no.28101 |
| 关键词 | GeSn Ge molecular beam epitaxy epitaxial growth SEMICONDUCTORS GE(001)2X1 |
| ISSN号 | 1000-3290 |
| 通讯作者 | cheng, bw, chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china. cbw@red.semi.ac.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national basic research program of china [2007cb613404]; national natural science foundation of china [61036003, 60906035, 51072194]; chinese academy of sciences, china [iscas2009t01] |
| 语种 | 中文 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | ge0.975sn0.025 alloy films have been grown on si(001) substrates by molecular beam epitaxy with high-quality ge films as buffer layers. the alloys have high crystalline quality without sn surface segregation, determined by double crystal x-ray diffraction and rutherford backscattering spectra measurement. in addition, the ge0.975sn0.025 alloy has rather good thermal stability at 500 degrees c, which makes it possible to be used in si-based optoelectronic devices. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21003]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Su SJ,Wang W,Zhang GZ,et al. Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy[J]. acta physica sinica,2011,60(2):article no.28101. |
| APA | Su SJ.,Wang W.,Zhang GZ.,Hu WX.,Bai AQ.,...&Wang QM.(2011).Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy.acta physica sinica,60(2),article no.28101. |
| MLA | Su SJ,et al."Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy".acta physica sinica 60.2(2011):article no.28101. |
入库方式： OAI收割
来源：半导体研究所
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