Effects of the electrical signals generated in passive sections of SG-DBR lasers
文献类型：期刊论文
| 作者 | Wang LX
|
| 刊名 | optics communications
 |
| 出版日期 | 2010 |
| 卷号 | 283期号:24页码:5156-5160 |
| 关键词 | Photocurrent Photodetector Photovoltaic effect Sampled-grating distributed Bragg reflector laser TUNING RANGE |
| ISSN号 | 0030-4018 |
| 通讯作者 | zhu, nh, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china [60820106004, 60536010, 60777029, 60837001]; national basic research and high technology development programs of china [2006cb604902, 2006cb302806, 2006dfa11880, 2009aa03z409]; meteorology industry research project of china [gyhy200806033] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | we investigate electrical signals generated in passive sections of a sampled-grating distributed bragg reflector laser a dc voltage is applied to one of the passive sections and a negative current in the circuit is observed with a low voltage biased experimental results demonstrate that the negative current is generated due to photovoltaic effect this effect could be enhanced or suppressed by adjusting the parameters of p-n junctions in the passive sections on account of this effect the passive sections can be utilized as inner photodetectors to control the laser power which greatly simplifies the laser packaging and reduces the cost (c) 2010 elsevier bv all rights reserved |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21005]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang LX. Effects of the electrical signals generated in passive sections of SG-DBR lasers[J]. optics communications,2010,283(24):5156-5160. |
| APA | Wang LX.(2010).Effects of the electrical signals generated in passive sections of SG-DBR lasers.optics communications,283(24),5156-5160. |
| MLA | Wang LX."Effects of the electrical signals generated in passive sections of SG-DBR lasers".optics communications 283.24(2010):5156-5160. |
入库方式： OAI收割
来源：半导体研究所
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