Optical properties of light-hole excitons in GaN epilayers
文献类型:期刊论文
作者 | Zhang F ; Xu SJ ; Ning JQ ; Zheng CC ; Zhao DG ; Yang H ; Che CM |
刊名 | journal of applied physics
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出版日期 | 2010 |
卷号 | 108期号:11页码:article no.116103 |
关键词 | TRANSITIONS ABSORPTION |
ISSN号 | 0021-8979 |
通讯作者 | zhang, f, univ hong kong, dept phys, pokfulam rd, hong kong, hong kong, peoples r china. sjxu@hkucc.hku.hk |
学科主题 | 光电子学 |
收录类别 | SCI |
资助信息 | nsfc [61028012]; university grants committee of the hong kong special administrative region, china [aoe/p-03/08] |
语种 | 英语 |
公开日期 | 2011-07-05 ; 2011-07-15 |
附注 | optical properties of light-hole free exciton (fxb) in gan epilayers were investigated by using near-resonance photoluminescence (pl) and time-resolved pl techniques. in contrast to the case of off-resonance pl where only heavy-hole free excitons (fxa) have strong response, fxb band can be well resolved in the near-resonance pl spectra. the variable-temperature near-resonance pl spectra show that the linewidth of fxb broadens faster than the fxa with increasing temperature. moreover, the luminescence lifetime of fxb is found to be shorter than that of fxa. (c) 2010 american institute of physics. [doi:10.1063/1.3520218] |
源URL | [http://ir.semi.ac.cn/handle/172111/21013] ![]() |
专题 | 半导体研究所_集成光电子学国家重点实验室 |
推荐引用方式 GB/T 7714 | Zhang F,Xu SJ,Ning JQ,et al. Optical properties of light-hole excitons in GaN epilayers[J]. journal of applied physics,2010,108(11):article no.116103. |
APA | Zhang F.,Xu SJ.,Ning JQ.,Zheng CC.,Zhao DG.,...&Che CM.(2010).Optical properties of light-hole excitons in GaN epilayers.journal of applied physics,108(11),article no.116103. |
MLA | Zhang F,et al."Optical properties of light-hole excitons in GaN epilayers".journal of applied physics 108.11(2010):article no.116103. |
入库方式: OAI收割
来源:半导体研究所
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