Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector
文献类型：期刊论文
| 作者 | Zhu JJ ; Jiang DS; Zhao DG; Deng Y; Wu LL; Zhang SM
|
| 刊名 | acta physica sinica
 |
| 出版日期 | 2010 |
| 卷号 | 59期号:12页码:8903-8909 |
| 关键词 | GaN ultraviolet and infrared photodetector quantum efficiency SOLAR-BLIND |
| ISSN号 | 1000-3290 |
| 通讯作者 | zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. dgzhao@red.semi.ac.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation for distinguished young scholars of china [60925017]; national natural science foundation of china [10990100, 60836003, 60776047] |
| 语种 | 中文 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | we have investigated the effect of algan layer parameter on the ultraviolet response of n(+)-gan/i-alxga1 (-) n-x/n(+)-gan structure ultraviolet-infrared photodetector and its physical mechanism. through the simulation, it is found that the decrease of algan background concentration has a positive effect on device's ultraviolet quantum efficiency. when algan layer background concentration cannot be reduced, the decrease of its thickness can ensure the efficiency. besides, interfical state should be minimized during materials growth and device fabrication. in addition, small reverse bias voltage can greatly increase ultraviolet quantum efficiency. all these phenomena may be mainly attributed to the existence of the back-to-back heterojunction and the opposite electrical field. it is suggested that we need to adjust structural parameters to obtain high quantum efficiency according to the materials quality in device design. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21015]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhu JJ,Jiang DS,Zhao DG,et al. Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector[J]. acta physica sinica,2010,59(12):8903-8909. |
| APA | Zhu JJ,Jiang DS,Zhao DG,Deng Y,Wu LL,&Zhang SM.(2010).Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector.acta physica sinica,59(12),8903-8909. |
| MLA | Zhu JJ,et al."Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector".acta physica sinica 59.12(2010):8903-8909. |
入库方式： OAI收割
来源：半导体研究所
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