中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
PHASE TRANSITION OF VANADIUM OXIDE FILMS ANNEALED WITH DIFFERENT METHODS

文献类型:期刊论文

作者Li GK
刊名journal of infrared and millimeter waves
出版日期2010
卷号29期号:6页码:457-460
关键词vanadium dioxide thin film infrared transmission spectrum rapid elevating temperatue THIN-FILMS VO2 FILMS TEMPERATURE FABRICATION
ISSN号1001-9014
通讯作者liang, jr, tianjin univ, sch elect & informat engn, tianjin 300072, peoples r china. liang_jiran@tju.edu.cn
学科主题光电子学
收录类别SCI
语种中文
公开日期2011-07-05 ; 2011-07-15
附注vanadium oxide thin films were deposited by dual ion beam sputtering, and then annealled with different procedures of temperature elevating. optical transmission properties were measured at different temperature by use of fourier transform infrared spectrum, from which the relationship of transmission and temperature at a fixed wavelength of 5 mu m was obtained. the results show that the vanadium oxide thin film annealed with rapid elevating temperature has smaller and uniform crystal size, while the film annealed with normal elevating temperature has larger and wider distributed crystal size. all the films after annealing have abrupt change over 60% in transmission in infrared band. the phase transition temperature of vanadium oxide thin film after rapid elevating temperature annealing is 63.74 degrees c, which is higher than that of vanadium oxide thin film after normal elevating temperature annealing, 60.31 degrees c. the temperature range of phase transition of the former is also broader.
源URL[http://ir.semi.ac.cn/handle/172111/21019]  
专题半导体研究所_集成光电子学国家重点实验室
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Li GK. PHASE TRANSITION OF VANADIUM OXIDE FILMS ANNEALED WITH DIFFERENT METHODS[J]. journal of infrared and millimeter waves,2010,29(6):457-460.
APA Li GK.(2010).PHASE TRANSITION OF VANADIUM OXIDE FILMS ANNEALED WITH DIFFERENT METHODS.journal of infrared and millimeter waves,29(6),457-460.
MLA Li GK."PHASE TRANSITION OF VANADIUM OXIDE FILMS ANNEALED WITH DIFFERENT METHODS".journal of infrared and millimeter waves 29.6(2010):457-460.

入库方式: OAI收割

来源:半导体研究所

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