Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators
文献类型：期刊论文
| 作者 | Xue CL
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 28期号:1页码:article no.14204 |
| ISSN号 | 0256-307x |
| 关键词 | SILICON PHOTODETECTORS SI |
| 通讯作者 | zhao, hw, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. hwzhao@semi.ac.cn |
| 学科主题 | 光电子学 |
| 资助信息 | national basic research program of china [2007cb613404]; national natural science foundation of china [61036003, 60906035]; chinese academy of sciences [iscas2009t01] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | we present two designs for a waveguide ge-quantum-well electro-absorption modulator. in our designs, the strip soi waveguides are butt-coupled and evanescent-coupled to the modulator, respectively. the proposed ge-quantum-well electro-absorption modulator is based on quantum-confined stark effect (qcse), having a 3-db bandwidth above 50 ghz, as well as a low switching power (around 60 fj/bit at 1435 nm). in the butt-coupled design, the optimized extinction ratio is up to 11.4 db, while the insertion loss is only 6.74 db. for the second one, which utilizes evanescent coupling, the extinction ratio and insertion loss are 9.18 db and 6.72 db, respectively. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21023]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xue CL. Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators[J]. chinese physics letters,2011,28(1):article no.14204. |
| APA | Xue CL.(2011).Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators.chinese physics letters,28(1),article no.14204. |
| MLA | Xue CL."Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators".chinese physics letters 28.1(2011):article no.14204. |
入库方式： OAI收割
来源：半导体研究所
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