Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices
文献类型：期刊论文
| 作者 | Ran GZ ; Jiang DF ; Kan Q ; Chen HD |
| 刊名 | applied physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 97期号:23页码:article no.233304 |
| 关键词 | DIODES PHOTONICS PLASMONICS EFFICIENCY |
| ISSN号 | 0003-6951 |
| 通讯作者 | kan, q, chinese acad sci, state key lab integrated optoelect, beijing 100083, peoples r china. kanqiang@semi.ac.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china [50732001, 10874011, 60877022, 60807010, 61036009, 60736037]; national 973 project [2007cb613402, 2010cb934104] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | we have observed a strongly polarized edge-emission from an organic light emitting device (oled) with a silicon anode and a stacked sm/au (or ag) cathode. for the oled with a sm/au cathode, the transverse magnetic (tm) mode is stronger than the transverse electric (te) mode by a factor of 2, while the polarization ratio of tm:te is close to 300 for that with a sm/ag cathode. the polarization results from the scattering of surface plasmon polaritons at the device boundary. such a silicon-based oled is potentially an electrically excited spp source in plasmonics. (c) 2010 american institute of physics. [doi:10.1063/1.3525161] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21027]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Ran GZ,Jiang DF,Kan Q,et al. Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices[J]. applied physics letters,2010,97(23):article no.233304. |
| APA | Ran GZ,Jiang DF,Kan Q,&Chen HD.(2010).Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices.applied physics letters,97(23),article no.233304. |
| MLA | Ran GZ,et al."Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices".applied physics letters 97.23(2010):article no.233304. |
入库方式： OAI收割
来源：半导体研究所
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