Time delay in InGaN multiple quantum well laser diodes at room temperature
文献类型：期刊论文
| 作者 | Wang H; Yang H; Yang H; Jiang DS ; Zhao DG; Zhu JJ; Wang H
|
| 刊名 | chinese physics b
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:12页码:article no.124211 |
| 关键词 | InGaN laser diode delay effect saturable absorber traps LIGHT EMISSION |
| ISSN号 | 1674-1056 |
| 通讯作者 | jin, la, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. jilian@red.semi.ac.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china [60976045, 60506001, 60836003, 60776047]; national basic research program of china [2007cb936700]; national natural science foundation for distinguished young scholars of china [60925017] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | this paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in ingan laser diodes. the delay time decreases as the pumping current increases, and the speed of the delay time reduction becomes slower as the current amplitude increases further. such delay phenomena are remarkably less serious in laser diodes grown on gan substrate than those on sapphire. it attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action. the traps can be bleached by capturing injected carriers. the effect of gaas laser irradiation on ingan laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21033]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang H,Yang H,Yang H,et al. Time delay in InGaN multiple quantum well laser diodes at room temperature[J]. chinese physics b,2010,19(12):article no.124211. |
| APA | Wang H.,Yang H.,Yang H.,Jiang DS.,Zhao DG.,...&Wang H.(2010).Time delay in InGaN multiple quantum well laser diodes at room temperature.chinese physics b,19(12),article no.124211. |
| MLA | Wang H,et al."Time delay in InGaN multiple quantum well laser diodes at room temperature".chinese physics b 19.12(2010):article no.124211. |
入库方式： OAI收割
来源：半导体研究所
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