Studies of the thin oxide of epitaxial sige/si film by high resolution grazing angle rutherford backscattering spectrometry and channeling
文献类型：期刊论文
| 作者 | Chen, ChangChun1; Liu, Jiangfeng1; Yu, BenHai1; Zhu, DeZhang2 |
| 刊名 | Electronic materials letters
 |
| 出版日期 | 2007-06-01 |
| 卷号 | 3期号:2页码:63-67 |
| 关键词 | Grazing angle rutherford backscattering spectrometry Strain Sige/si heterosystem |
| ISSN号 | 1738-8090 |
| 通讯作者 | Chen, changchun(changchunchen@hotmail.com) |
| 英文摘要 | Grazing angle rutherford backscattering spectrometry/channeling (rbs/c) with an improved depth resolution (2-3 nm) in combination with x-ray photoelectron spectroscopy (xps) was used to investigate the thin oxide of si1-xgex (x=0, 0.2 and 0.3) films oxidized at elevated temperatures in a dry chlorinated ambient atmosphere (o-2,/cl). experimental results showed that after oxidation, only sio2 was formed while ge was completely rejected from the oxide to form ge-rich layers. the effect of the oxidation enhancement of the sige alloy with an increase in the ge content was also found in this study. the strain of the unoxidized sige layer underneath the oxide layer characterized by channeling angular scans indicates that these rejected ge atoms during oxidation have less influence on the integrity of the sige layer due to diffusion of the ge atoms. |
| WOS关键词 | RAPID THERMAL-OXIDATION ; GE+-IMPLANTED SI ; MULTILAYERS ; KINETICS ; ALLOYS ; STRAIN ; LAYERS ; DRY |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000255333700004 |
| 出版者 | KOREAN INST METALS MATERIALS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2175854 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Chen, ChangChun |
| 作者单位 | 1.XinYang Normal Univ, Coll Phys & Elect Engn, XinYang 464000, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Nucl Anal Tech, Shanghai 201800, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, ChangChun,Liu, Jiangfeng,Yu, BenHai,et al. Studies of the thin oxide of epitaxial sige/si film by high resolution grazing angle rutherford backscattering spectrometry and channeling[J]. Electronic materials letters,2007,3(2):63-67. |
| APA | Chen, ChangChun,Liu, Jiangfeng,Yu, BenHai,&Zhu, DeZhang.(2007).Studies of the thin oxide of epitaxial sige/si film by high resolution grazing angle rutherford backscattering spectrometry and channeling.Electronic materials letters,3(2),63-67. |
| MLA | Chen, ChangChun,et al."Studies of the thin oxide of epitaxial sige/si film by high resolution grazing angle rutherford backscattering spectrometry and channeling".Electronic materials letters 3.2(2007):63-67. |
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来源：高能物理研究所
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