中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Intrinsic room temperature ferromagnetism in boron-doped zno

文献类型:期刊论文

作者Xu, X. G.1; Yang, H. L.1; Wu, Y.1; Zhang, D. L.1; Wu, S. Z.1; Miao, J.1; Jiang, Y.1; Qin, X. B.2; Cao, X. Z.2; Wang, B. Y.2
刊名Applied physics letters
出版日期2010-12-06
卷号97期号:23页码:3
ISSN号0003-6951
DOI10.1063/1.3524493
通讯作者Jiang, y.(yjiang@ustb.edu.cn)
英文摘要We report room temperature ferromagnetism in boron-doped zno both experimentally and theoretically. the single phase zn1-xbxo films deposited under high oxygen pressure by pulsed laser deposition show ferromagnetic behavior at room temperature. the saturation magnetization increases monotonically from 0 to 1.5 emu/cm(3) with the increasing boron component x from 0% to 6.8%. the first-principles calculations demonstrate that the ferromagnetism in the b-doped zno originates from the induced magnetic moment of oxygen atoms in the nearest neighbor sites to b-zn vacancy pairs. the calculated total magnetic moment shows an increasing trend with the boron component which is consistent with experiment. (c) 2010 american institute of physics. [doi:10.1063/1.3524493]
WOS关键词MAGNETIC SEMICONDUCTORS ; THIN-FILMS ; SURFACES
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
出版者AMER INST PHYSICS
WOS记录号WOS:000285364000044
URI标识http://www.irgrid.ac.cn/handle/1471x/2175961
专题高能物理研究所
通讯作者Jiang, Y.
作者单位1.Univ Sci & Technol Beijing, State Key Lab Adv Met & Mat, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Key Lab Nucl Anal Tech, Inst High Energy Phys, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Xu, X. G.,Yang, H. L.,Wu, Y.,et al. Intrinsic room temperature ferromagnetism in boron-doped zno[J]. Applied physics letters,2010,97(23):3.
APA Xu, X. G..,Yang, H. L..,Wu, Y..,Zhang, D. L..,Wu, S. Z..,...&Wang, B. Y..(2010).Intrinsic room temperature ferromagnetism in boron-doped zno.Applied physics letters,97(23),3.
MLA Xu, X. G.,et al."Intrinsic room temperature ferromagnetism in boron-doped zno".Applied physics letters 97.23(2010):3.

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