Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing
文献类型：期刊论文
| 作者 | Li Zhuo-Xin1,2; Wang Dan-Ni1; Wang Bao-Yi1; Xue De-Sheng2; Wei Long1; Qin Xiu-Bo1 |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2010-12-01 |
| 卷号 | 59期号:12页码:8915-8919 |
| 关键词 | Porous silicon Photoluminescence Positron annihilation spectroscopy |
| ISSN号 | 1000-3290 |
| 通讯作者 | Wang bao-yi(wangboy@ihep.ac.cn) |
| 英文摘要 | Porous silicon (ps) treated by water vapor annealing and vacuum annealing has been studied by positron annihilation lifetime spectroscopy and age-momentum correlation measurement. it is found that after water vapor annealing, non-radiative defects are reduced and defects dominating light source appear. these two types of defects change the lifetime and the s parameter of the positron annihilation and cause a drastic enhancement in the photoluminescence (pl) efficiency. defects that cause the pl of ps show no obvious change after annealing at 300 degrees c in vacuum, therefore the pl of the sample is not influenced. |
| WOS关键词 | HYPERFINE INTERACTION ; THERMAL (100)SI/SIO2 ; LIFETIME ; STATE ; SI |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000286689500086 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2175963 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Wang Bao-Yi |
| 作者单位 | 1.Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China 2.Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li Zhuo-Xin,Wang Dan-Ni,Wang Bao-Yi,et al. Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing[J]. Acta physica sinica,2010,59(12):8915-8919. |
| APA | Li Zhuo-Xin,Wang Dan-Ni,Wang Bao-Yi,Xue De-Sheng,Wei Long,&Qin Xiu-Bo.(2010).Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing.Acta physica sinica,59(12),8915-8919. |
| MLA | Li Zhuo-Xin,et al."Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing".Acta physica sinica 59.12(2010):8915-8919. |
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来源：高能物理研究所
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