中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Quantum critical point in smo1-xfxfeas and oxygen vacancy induced by high fluorine dopant

文献类型:期刊论文

作者Cheng, Jie1,2; Chu, Shengqi2; Chu, Wangsheng1,2; Xu, Wei2; Zhou, Jing2; Zhang, Linjuan2; Zhao, Haifeng2; Liu, Ronghua3; Chen, Xianhui3; Marcelli, Augusto4,5
刊名Journal of synchrotron radiation
出版日期2011-09-01
卷号18页码:723-727
关键词Smo1-xfxfeas Xanes Oxygen vacancy
ISSN号0909-0495
DOI10.1107/s0909049511026483
通讯作者Chu, wangsheng(cws@ihep.ac.cn)
英文摘要The local lattice and electronic structure of the high-t-c superconductor smo1-xfxfeas as a function of f-doping have been investigated by sm l-3-edge x-ray absorption near-edge structure and multiple-scattering calculations. experiments performed at the l-3-edge show that the white line (wl) is very sensitive to f-doping. in the under-doped region (x <= 0.12) the wl intensity increases with doping and then it suddenly starts decreasing at x = 0.15. meanwhile, the trend of the wl linewidth versus f-doping levels is just contrary to that of the intensity. the phenomenon is almost coincident with the quantum critical point occurring in smo1-xfxfeas at x similar or equal to 0.14. in the under-doped region the increase of the intensity is related to the localization of sm-5d states, while theoretical calculations show that both the decreasing intensity and the consequent broadening of linewidth at high f-doping are associated with the content and distribution of oxygen vacancies.
WOS关键词X-RAY-ABSORPTION ; MULTIPLE-SCATTERING RESONANCES ; FINE-STRUCTURE ; 43 K ; SUPERCONDUCTIVITY ; PRESSURE ; CLUSTERS ; SPECTRA ; VALENCE ; SYSTEM
WOS研究方向Instruments & Instrumentation ; Optics ; Physics
WOS类目Instruments & Instrumentation ; Optics ; Physics, Applied
语种英语
WOS记录号WOS:000294821600006
出版者WILEY-BLACKWELL
URI标识http://www.irgrid.ac.cn/handle/1471x/2176101
专题高能物理研究所
通讯作者Chu, Wangsheng
作者单位1.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China
2.Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing 100049, Peoples R China
3.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
4.Ist Nazl Fis Nucl, Lab Nazl Frascati, I-00044 Frascati, Italy
5.Chinese Acad Sci, Univ Sci & Technol China, Hefei 230026, Peoples R China
推荐引用方式
GB/T 7714
Cheng, Jie,Chu, Shengqi,Chu, Wangsheng,et al. Quantum critical point in smo1-xfxfeas and oxygen vacancy induced by high fluorine dopant[J]. Journal of synchrotron radiation,2011,18:723-727.
APA Cheng, Jie.,Chu, Shengqi.,Chu, Wangsheng.,Xu, Wei.,Zhou, Jing.,...&Wu, Ziyu.(2011).Quantum critical point in smo1-xfxfeas and oxygen vacancy induced by high fluorine dopant.Journal of synchrotron radiation,18,723-727.
MLA Cheng, Jie,et al."Quantum critical point in smo1-xfxfeas and oxygen vacancy induced by high fluorine dopant".Journal of synchrotron radiation 18(2011):723-727.

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来源:高能物理研究所

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