New binuclear pd(ii) thioamide complexes for the heck reaction of aryl bromides
文献类型：期刊论文
| 作者 | Raja, Mathiyazhagan Ulaganatha1; Ramesh, Rengan1; Liu, Yu2 |
| 刊名 | Tetrahedron letters
 |
| 出版日期 | 2011-10-19 |
| 卷号 | 52期号:42页码:5427-5430 |
| 关键词 | Thioamide ligand Binuclear palladium Heck reaction |
| ISSN号 | 0040-4039 |
| DOI | 10.1016/j.tetlet.2011.07.080 |
| 通讯作者 | Ramesh, rengan(ramesh_bdu@yahoo.com) |
| 英文摘要 | The reaction of binucleating thioamide ligands (l(1)-l(3)) with [pdcl(2)(pph(3))(2)] in 1:2 molar ratio in methanol medium afforded a series of binuclear palladium(ii) complexes. the synthesized complexes were characterized by elemental analysis and (1)h nmr. the molecular structure of one of the complexes was established by x-ray diffraction method. the binuclear palladium(ii) thioamide complex has been shown to be an active catalyst for the heck reaction of aryl bromides with alkenes. (c) 2011 elsevier ltd. all rights reserved. |
| WOS关键词 | PALLADIUM PINCER COMPLEXES ; COUPLING REACTIONS ; ORGANIC HALIDES ; CATALYSTS ; MECHANISM ; ARYLATION ; LIGANDS ; SUZUKI |
| WOS研究方向 | Chemistry |
| WOS类目 | Chemistry, Organic |
| 语种 | 英语 |
| WOS记录号 | WOS:000295552400004 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2176215 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Ramesh, Rengan |
| 作者单位 | 1.Bharathidasan Univ, Sch Chem, Tiruchchirappalli 620024, Tamil Nadu, India 2.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Raja, Mathiyazhagan Ulaganatha,Ramesh, Rengan,Liu, Yu. New binuclear pd(ii) thioamide complexes for the heck reaction of aryl bromides[J]. Tetrahedron letters,2011,52(42):5427-5430. |
| APA | Raja, Mathiyazhagan Ulaganatha,Ramesh, Rengan,&Liu, Yu.(2011).New binuclear pd(ii) thioamide complexes for the heck reaction of aryl bromides.Tetrahedron letters,52(42),5427-5430. |
| MLA | Raja, Mathiyazhagan Ulaganatha,et al."New binuclear pd(ii) thioamide complexes for the heck reaction of aryl bromides".Tetrahedron letters 52.42(2011):5427-5430. |
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来源：高能物理研究所
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