Formation of titanium nitride films by energetic cluster impact deposition
文献类型：期刊论文
| 作者 | Yu, GQ; Chen, JS; Shi, Y; Pan, HC; Zhu, DZ; Xu, HJ; Zheng, ZH |
| 刊名 | Thin solid films
 |
| 出版日期 | 1998-12-14 |
| 卷号 | 335期号:1-2页码:59-63 |
| 关键词 | Titanium nitride Rutherford backscattering spectrometry Proton elastic scattering X-ray diffraction |
| ISSN号 | 0040-6090 |
| 通讯作者 | Zhu, dz(dzzhu@fudan.ac.cn) |
| 英文摘要 | Titanium nitride (tin) films were formed on silicon (100) substrates at room temperature by energetic cluster impact deposition (ecid). the films show a gold-like color. the influence of deposition conditions, such as nitrogen partial pressure (p-n2) and sputter current (i-s), on the propel-ties of the films, was investigated by rutherford backscattering spectrometry (rbs), proton elastic scattering (pes) and x-ray diffraction (xrd). the res results show the film thickness is typically 360 nm. it is found using pes spectra that the relative content of nitrogen in the films increases first fast then slowly with the increase of nitrogen gas partial pressure (p-n2) xrd results show the films appear to be (220) preferential orientation. additionally, a certain amount of oxygen impurity was incorporated into the films. some explanations for the above results are also given in this paper. (c) 1998 elsevier science s.a. all rights reserved. |
| WOS关键词 | TIN ; COATINGS ; ZRN ; HFN |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000077866700011 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2176274 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Zhu, DZ |
| 作者单位 | 1.Acad Sinica, Shanghai Inst Nucl Res, Lab Nucl Anal Tech, Shanghai 201800, Peoples R China 2.Lanzhou Univ, Dept Modern Phys, Lanzhou 730000, Peoples R China 3.E China Normal Univ, Dept Phys, Shanghai 200062, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yu, GQ,Chen, JS,Shi, Y,et al. Formation of titanium nitride films by energetic cluster impact deposition[J]. Thin solid films,1998,335(1-2):59-63. |
| APA | Yu, GQ.,Chen, JS.,Shi, Y.,Pan, HC.,Zhu, DZ.,...&Zheng, ZH.(1998).Formation of titanium nitride films by energetic cluster impact deposition.Thin solid films,335(1-2),59-63. |
| MLA | Yu, GQ,et al."Formation of titanium nitride films by energetic cluster impact deposition".Thin solid films 335.1-2(1998):59-63. |
入库方式： iSwitch采集
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。