High-density transition layer in oxynitride interfaces on si(100)
文献类型：期刊论文
| 作者 | Wang, J; Lee, DR; Park, C; Jeong, YH; Lee, KB; Park, YJ; Youn, SB; Park, JC; Choi, HM; Huh, YJ |
| 刊名 | Applied physics letters
 |
| 出版日期 | 1999-12-13 |
| 卷号 | 75期号:24页码:3775-3777 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wang, j() |
| 英文摘要 | Nitrided sio2 thin films on si wafers were studied by x-ray reflectivity measurements and their electron-density profiles were evaluated. interfacial layers of the oxides were found to have densities higher than that of either crystalline si substrates or strained interfacial layers of thermal oxides. the high density probably results from nitrogen incorporation near the interfaces. the present results suggest that strongly retarded boron penetration through nitrided gate oxides is due to their high-density interfacial layers. (c) 1999 american institute of physics. [s0003-6951(99)00950-x]. |
| WOS关键词 | X-RAY REFLECTIVITY ; BORON-DIFFUSION ; P-MOSFETS ; OXIDE ; N2O ; PENETRATION ; SILICON ; SIO2 ; SUPPRESSION ; OXIDATION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000084242600013 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2176283 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Wang, J |
| 作者单位 | 1.Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea 2.Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea 3.LG Semicon Co, ULSI Res Ctr, Cheongju 361480, South Korea 4.Inst High Energy Phys, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, J,Lee, DR,Park, C,et al. High-density transition layer in oxynitride interfaces on si(100)[J]. Applied physics letters,1999,75(24):3775-3777. |
| APA | Wang, J.,Lee, DR.,Park, C.,Jeong, YH.,Lee, KB.,...&Huh, YJ.(1999).High-density transition layer in oxynitride interfaces on si(100).Applied physics letters,75(24),3775-3777. |
| MLA | Wang, J,et al."High-density transition layer in oxynitride interfaces on si(100)".Applied physics letters 75.24(1999):3775-3777. |
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来源：高能物理研究所
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