Radiation hardness studies of ams hv-cmos 350nm prototype chip hvstripv1
文献类型：期刊论文
| 作者 | Kanisauskas, K.2,3; Affolder, A.1; Arndt, K.2; Bates, R.3; Benoit, M.4; Di Bello, F.4; Blue, A.3; Bortoletto, D.2; Buckland, M.5; Buttar, C.3 |
| 刊名 | Journal of instrumentation
 |
| 出版日期 | 2017-02-01 |
| 卷号 | 12页码:18 |
| 关键词 | Radiation-hard detectors Solid state detectors Si microstrip and pad detectors |
| ISSN号 | 1748-0221 |
| DOI | 10.1088/1748-0221/12/02/p02010 |
| 通讯作者 | Kanisauskas, k.(k.kanisauskas.1@research.gla.ac.uk) |
| 英文摘要 | Cmos active pixel sensors are being investigated for their potential use in the atlas inner tracker upgrade at the hl-lhc. the new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. this paper focuses on the prototype chip "hvstripv1" (manufactured in the ams hv-cmos 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the hl-lhc environment. the results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of approximate to 2.4 and approximate to 2.8 for two active pixels on the test chip. there was also a notable increase in noise levels from 85e(-) to 386e(-) and from 75e(-) to 277e(-) for the corresponding pixels. |
| WOS关键词 | HIGH-ENERGY-PHYSICS ; PIXEL DETECTOR |
| WOS研究方向 | Instruments & Instrumentation |
| WOS类目 | Instruments & Instrumentation |
| 语种 | 英语 |
| WOS记录号 | WOS:000397826200010 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2176710 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Kanisauskas, K. |
| 作者单位 | 1.Univ Liverpool, Liverpool, Merseyside, England 2.Univ Oxford, Oxford, England 3.Univ Glasgow, SUPA Sch Phys & Astron, Glasgow, Lanark, Scotland 4.Univ Geneva, Geneva, Switzerland 5.CERN, European Ctr Nucl Res, Geneva, Switzerland 6.SLAC Natl Accelerator Lab, Stanford, CA USA 7.Rutherford Appleton Lab, Didcot, Oxon, England 8.Karlsruhe Inst Technol, Karlsruhe, Germany 9.Univ Calif Santa Cruz, Santa Cruz Inst Particle Phys, Santa Cruz, CA 95064 USA 10.DESY, Hamburg, Germany |
| 推荐引用方式 GB/T 7714 | Kanisauskas, K.,Affolder, A.,Arndt, K.,et al. Radiation hardness studies of ams hv-cmos 350nm prototype chip hvstripv1[J]. Journal of instrumentation,2017,12:18. |
| APA | Kanisauskas, K..,Affolder, A..,Arndt, K..,Bates, R..,Benoit, M..,...&Zhu, H..(2017).Radiation hardness studies of ams hv-cmos 350nm prototype chip hvstripv1.Journal of instrumentation,12,18. |
| MLA | Kanisauskas, K.,et al."Radiation hardness studies of ams hv-cmos 350nm prototype chip hvstripv1".Journal of instrumentation 12(2017):18. |
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