Electronic structure of la2o3/si interface by in situ photoemission spectroscopy
文献类型：期刊论文
| 作者 | Ablat, Abduleziz1; Mamat, Mamatrishat1; Ghupur, Yasin1; Aimidula, Aimierding1; Wu, Rong1; Baqi, Muhammad Ali1; Gholam, Turghunjan1; Wang, Jiaou2; Qian, Haijie2; Wu, Rui2 |
| 刊名 | Materials letters
 |
| 出版日期 | 2017-03-15 |
| 卷号 | 191页码:97-100 |
| 关键词 | La2o3 High-k Structural X-ray techniques Interface |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2016.12.137 |
| 通讯作者 | Ablat, abduleziz(a_ablat@hotmail.com) ; Mamat, mamatrishat(mmtrxt@xju.edu.cn) |
| 英文摘要 | A study of the interface between la2o3 films and si substrates was conducted with the aim to understand interfacial change during the film growth process. a detailed comparison of si 2s, 2p, and o 1s photoelectron spectra of the la2o3/si interface formed on clean silicon substrates indicates that a la-silicate phase forms rapidly at the interface during the film deposition process. a detailed analysis of la(2)o3 films of varying thicknesses showed that as film layering increased, the substrates became coated with an la silicate interfacial layer which prevents the formation of siox. moreover, the la2o3 forms when film thickness reaches a certain value, leading to practical application of la2o3 in the manufacture of mosfet transistors. (c) 2017 elsevier b.v. all rights reserved. |
| WOS关键词 | RAY PHOTOELECTRON-SPECTROSCOPY ; ATOMIC LAYER DEPOSITION |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000394403000025 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2176782 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Ablat, Abduleziz; Mamat, Mamatrishat |
| 作者单位 | 1.Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China 2.Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ablat, Abduleziz,Mamat, Mamatrishat,Ghupur, Yasin,et al. Electronic structure of la2o3/si interface by in situ photoemission spectroscopy[J]. Materials letters,2017,191:97-100. |
| APA | Ablat, Abduleziz.,Mamat, Mamatrishat.,Ghupur, Yasin.,Aimidula, Aimierding.,Wu, Rong.,...&Ibrahim, Kurash.(2017).Electronic structure of la2o3/si interface by in situ photoemission spectroscopy.Materials letters,191,97-100. |
| MLA | Ablat, Abduleziz,et al."Electronic structure of la2o3/si interface by in situ photoemission spectroscopy".Materials letters 191(2017):97-100. |
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