Epitaxial fabrication of two-dimensional nise2 on ni(111) substrate
文献类型：期刊论文
| 作者 | Shao, Yan1,2,3; Song, Shiru1,2,3; Wu, Xu1,2,3; Qi, Jing1,2,3; Lu, Hongliang1,2,3; Liu, Chen4; Zhu, Shiyu1,2,3; Liu, Zhongliu1,2,3; Wang, Jiaou4; Shi, Dongxia1,2,3 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2017-09-11 |
| 卷号 | 111期号:11页码:5 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.4991065 |
| 通讯作者 | Du, shixuan(sxdu@iphy.ac.cn) |
| 英文摘要 | Two-dimensional (2d) transition metal dichalcogenides (tmds) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, and catalysis. a high-quality 2d film of nise2, a tmd material, is grown epitaxially by a single step direct selenization of a ni(111) substrate. x-ray photoemission spectroscopy, low-energy electron diffraction, scanning tunneling microscopy, and density functional theory calculations are combined to confirm the formation and structure of the film, revealing a (root 3 x root 3) superlattice of the nise2 film formed on the (root 7 x root 7) superlattice of the substrate. fabrication of this 2d nise2 film opens opportunities to research its applications, especially for electrocatalysis and energy storage devices. published by aip publishing. |
| WOS关键词 | TRANSITION-METAL-DICHALCOGENIDE ; SCANNING TUNNELING MICROSCOPE ; AUGMENTED-WAVE METHOD ; CHARGE-DENSITY-WAVE ; HYDROGEN EVOLUTION ; MONOLAYER MOS2 ; EFFICIENT ; SUPERCONDUCTIVITY ; NANOCLUSTERS ; NANOSHEETS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000413590200002 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2177151 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Du, Shixuan |
| 作者单位 | 1.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Chinese Acad Sci, Beijing 100190, Peoples R China 3.Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China 4.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China 5.Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shao, Yan,Song, Shiru,Wu, Xu,et al. Epitaxial fabrication of two-dimensional nise2 on ni(111) substrate[J]. Applied physics letters,2017,111(11):5. |
| APA | Shao, Yan.,Song, Shiru.,Wu, Xu.,Qi, Jing.,Lu, Hongliang.,...&Gao, H. -J..(2017).Epitaxial fabrication of two-dimensional nise2 on ni(111) substrate.Applied physics letters,111(11),5. |
| MLA | Shao, Yan,et al."Epitaxial fabrication of two-dimensional nise2 on ni(111) substrate".Applied physics letters 111.11(2017):5. |
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来源：高能物理研究所
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