Photoluminescence properties and energy level of re (re = pr, sm, tb, er, dy) in y4si2o7n2
文献类型：期刊论文
| 作者 | Wang, Guo-Jun1; Pan, Dong-Jie1; Xu, Tao1; Xiang, Guang-Xin1; Zhang, Zhi-Jun1; Hintzen, Hubertus T.2; Zhao, Jing-Tai1; Huang, Yan3 |
| 刊名 | Journal of alloys and compounds
 |
| 出版日期 | 2017-06-25 |
| 卷号 | 708页码:154-161 |
| 关键词 | Photoluminescence Y4si2o7n2 Energy level Re3+-activate Silicon-oxynitride |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2017.02.298 |
| 通讯作者 | Zhang, zhi-jun(zhangzhijun@shu.edu.cn) |
| 英文摘要 | Re3+ (re = pr, sm, tb, er, dy)-activated y4si2o7n2 samples were prepared by a solid-state reaction method at high temperature, and their photoluminescence properties were investigated. the absorption band located at about 250 nm is attributed to the host absorption. the 5d bands of pr3+ and tb3+ are at rather low energy in y4si2o7n2 compared to oxide. the direct pr3+ 4f(2) -> 4f(1)5d(1) excitation at 275 nm leads to typical 4f(2) -> 4f(2) line emissions (450-700 nm) and strong 4f(1)5d(1) -> 4f(2) broad band emission (300-450 nm), respectively. the charge transfer (n3- -> sm3+) band of sm3+ was observed at a somewhat lower energy of 4.68 ev compared to oxide, and sm3+-activated sample shows a bright red emission originating from (4)g(5/2) -> h-6(j) (j = 5/2, 7/2 and 9/2) transitions. for tb3+-doped sample, the direct tb3+ 4f(8) -> 4f(7)5d(1) excitation leads to d-5(3) -> f-7(j) (j = 6, 5, 4, 3) (blue) and d-5(4) -> f-7(j) (j = 6, 5, 4, 3) (green) line emissions, the cross-relaxation depended on tb concentration has happened. the incorporation of er3+ (or dy3+) into y4si2o7n2 resulted in a typical er3+ (or dy3+) f-f line absorptions and emissions. moreover, the energy transfer from the host lattice to the luminescent activators (pr3+, tb3+ and sm3+) is observed. the energy level diagram containing the position of 4f and 5d energy levels of all ln(2+) and ln(3+) ions relative to the valence and conduction band of y4si2o7n2 has been established and studied based on the data presented in this work, and further provides a platform for studying the photoluminescence properties as well as the valence stability of the lanthanide ions. (c) 2017 published by elsevier b. v. |
| WOS关键词 | LUMINESCENCE PROPERTIES ; CRYSTAL-STRUCTURE ; WHITE LEDS ; PHOSPHORS ; CE3+ ; LANTHANIDES ; DISCOVERY ; POSITIONS ; EMISSION ; MELILITE |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000400713300021 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2177194 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Zhang, Zhi-Jun |
| 作者单位 | 1.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China 2.Delft Univ Technol, Luminescent Mat Res Grp, Mekelweg 15, NL-2629 JB Delft, Netherlands 3.Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Guo-Jun,Pan, Dong-Jie,Xu, Tao,et al. Photoluminescence properties and energy level of re (re = pr, sm, tb, er, dy) in y4si2o7n2[J]. Journal of alloys and compounds,2017,708:154-161. |
| APA | Wang, Guo-Jun.,Pan, Dong-Jie.,Xu, Tao.,Xiang, Guang-Xin.,Zhang, Zhi-Jun.,...&Huang, Yan.(2017).Photoluminescence properties and energy level of re (re = pr, sm, tb, er, dy) in y4si2o7n2.Journal of alloys and compounds,708,154-161. |
| MLA | Wang, Guo-Jun,et al."Photoluminescence properties and energy level of re (re = pr, sm, tb, er, dy) in y4si2o7n2".Journal of alloys and compounds 708(2017):154-161. |
入库方式： iSwitch采集
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。