Effect of doping concentration on point defect structure in as-implanted zno
文献类型：期刊论文
| 作者 | Wang, Huan-hua1,2; Yuan, Mengyao1 |
| 刊名 | Solid state communications
 |
| 出版日期 | 2017-08-01 |
| 卷号 | 261页码:41-45 |
| 关键词 | P-type zno Ion implantation Diffuse x-ray scattering Point defects |
| ISSN号 | 0038-1098 |
| DOI | 10.1016/j.ssc.2017.04.021 |
| 通讯作者 | Wang, huan-hua(wanghh@ihep.ac.cn) |
| 英文摘要 | The effect of doping concentration on the point defect structure of as-implanted zno single crystal was investigated using diffuse x-ray scattering and photoluminescence spectroscopy. based on the assumption that the low-dose ion implantation did not shift the phonon dispersion of the lattice, huang diffuse scattering signals were obtained by subtracting thermal diffuse scattering intensities. we found that the point defects aggregate into defect clusters after annealing, and their average size decreases and concentration increases with increasing the doping concentration. the underlying mechanisms of this counter-intuition result were suggested. |
| WOS关键词 | X-RAY-SCATTERING ; THIN-FILMS ; LATTICE ; SI |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000405690400009 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2177258 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Wang, Huan-hua |
| 作者单位 | 1.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China 2.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Huan-hua,Yuan, Mengyao. Effect of doping concentration on point defect structure in as-implanted zno[J]. Solid state communications,2017,261:41-45. |
| APA | Wang, Huan-hua,&Yuan, Mengyao.(2017).Effect of doping concentration on point defect structure in as-implanted zno.Solid state communications,261,41-45. |
| MLA | Wang, Huan-hua,et al."Effect of doping concentration on point defect structure in as-implanted zno".Solid state communications 261(2017):41-45. |
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来源：高能物理研究所
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