Development of the abcstar front-end chip for the atlas silicon strip upgrade
文献类型:期刊论文
作者 | Lu, W.1; Anghinolfi, F.2; Cheng, L.1; De Witt, J.3; Kaplon, J.2; Keener, P.4; Narayan, A.4; Newcomer, M.4; Swientek, K.5 |
刊名 | Journal of instrumentation
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出版日期 | 2017-04-01 |
卷号 | 12页码:10 |
关键词 | Analogue electronic circuits Digital electronic circuits Front-end electronics for detector readout Vlsi circuits |
ISSN号 | 1748-0221 |
DOI | 10.1088/1748-0221/12/04/c04017 |
通讯作者 | Lu, w.(weiguo.lu@cern.ch) |
英文摘要 | The atlas experiment will build an all-silicon tracker in the phase ii upgrade for the high luminosity lhc (hl-lhc) at cern. for the silicon strip detector of the inner tracker, a new readout chip abcstar is under design to cope with the increased occupancies and harsher radiation environment, and to accomodate the new trigger architecture. in this paper, we summarize the status of the design work and present the new features of the chip. |
WOS研究方向 | Instruments & Instrumentation |
WOS类目 | Instruments & Instrumentation |
语种 | 英语 |
WOS记录号 | WOS:000405067500017 |
出版者 | IOP PUBLISHING LTD |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2177273 |
专题 | 高能物理研究所 |
通讯作者 | Lu, W. |
作者单位 | 1.Chinese Acad Sci, Inst High Energy Phys, State Key Lab Particle Detect & Elect, Beijing, Peoples R China 2.CERN, European Certer Nucl Res, Geneva, Switzerland 3.Univ Calif Santa Cruz, Santa Cruz Inst Particle Phys, Santa Cruz, CA 95064 USA 4.Univ Penn, Philadelphia, PA 19104 USA 5.AGH Univ Sci & Technol, Dept Phys & Appl Comp Sci, Krakow, Poland |
推荐引用方式 GB/T 7714 | Lu, W.,Anghinolfi, F.,Cheng, L.,et al. Development of the abcstar front-end chip for the atlas silicon strip upgrade[J]. Journal of instrumentation,2017,12:10. |
APA | Lu, W..,Anghinolfi, F..,Cheng, L..,De Witt, J..,Kaplon, J..,...&Swientek, K..(2017).Development of the abcstar front-end chip for the atlas silicon strip upgrade.Journal of instrumentation,12,10. |
MLA | Lu, W.,et al."Development of the abcstar front-end chip for the atlas silicon strip upgrade".Journal of instrumentation 12(2017):10. |
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来源:高能物理研究所
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