Pressure-induced structural and semiconductor-semiconductor transitions in co0.5mg0.5cr2o4
文献类型：期刊论文
| 作者 | Rahman, S.1,2; Saqib, Hajra2; Zhang, Jinbo3; Errandonea, D.4; Menendez, C.5; Cazorla, C.5; Samanta, Sudeshna2; Li, Xiaodong6; Lu, Junling1; Wang, Lin2 |
| 刊名 | Physical review b
 |
| 出版日期 | 2018-05-10 |
| 卷号 | 97期号:17页码:9 |
| ISSN号 | 2469-9950 |
| DOI | 10.1103/physrevb.97.174102 |
| 通讯作者 | Lu, junling(junling@ustc.edu.cn) |
| 英文摘要 | The effect of pressure on the structural, vibrational, and electronic properties of mg-doped cr bearing spinel co0.5mg0.5cr2o4 was studied up to 55 gpa at room-temperature using x-ray diffraction, raman spectroscopy, electrical transport measurements, and ab initio calculations. we found that the ambient-pressure phase is cubic (spinel-type, fd(3)over-barm) and underwent a pressure-induced structural transition to a tetragonal phase (space group i(4)over-barm2) above 28 gpa. the ab initio calculation confirmed this first-order phase transition. the resistivity of the sample decreased at low pressures with the existence of a low-pressure (lp) phase and started to increase with the emergence of a high-pressure (hp) phase. the temperature dependent resistivity experiments at different pressures illustrated the wide band gap semiconducting nature of both the lp and hp phases with different activation energies, suggesting a semiconductor-semiconductor transition at hp. no evidence of chemical decomposition or a semiconductor-metal transition was observed in our studies. |
| WOS关键词 | X-RAY-DIFFRACTION ; AUGMENTED-WAVE METHOD ; EQUATION-OF-STATE ; SPINEL MGCR2O4 ; ZN ; NANOPARTICLES ; STABILITY ; BEHAVIOR ; MG |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000432031700001 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2177583 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Lu, Junling |
| 作者单位 | 1.Univ Sci & Technol China, Dept Chem Phys, Hefei, Anhui, Peoples R China 2.Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China 3.Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China 4.Univ Valencia, MALTA Consolider Team, Dept Fis Aplicada ICMUV, Edificio Invest,C Dr Moliner 50, E-46100 Valencia, Spain 5.UNSW Australia, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia 6.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Rahman, S.,Saqib, Hajra,Zhang, Jinbo,et al. Pressure-induced structural and semiconductor-semiconductor transitions in co0.5mg0.5cr2o4[J]. Physical review b,2018,97(17):9. |
| APA | Rahman, S..,Saqib, Hajra.,Zhang, Jinbo.,Errandonea, D..,Menendez, C..,...&Wang, Lin.(2018).Pressure-induced structural and semiconductor-semiconductor transitions in co0.5mg0.5cr2o4.Physical review b,97(17),9. |
| MLA | Rahman, S.,et al."Pressure-induced structural and semiconductor-semiconductor transitions in co0.5mg0.5cr2o4".Physical review b 97.17(2018):9. |
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