Identifying defect energy levels using dlts under different electron irradiation conditions
文献类型：期刊论文
| 作者 | Guo, Chun-Sheng1,2,3; Wang, Ruo-Min1; Zhang, Yu-Wei2; Pei, Guo-Xi3; Feng, Shi-Wei1; Li, Zhao-Xian2 |
| 刊名 | Nuclear science and techniques
 |
| 出版日期 | 2017-12-01 |
| 卷号 | 28期号:12页码:7 |
| 关键词 | Electron irradiation Deep level transient spectroscopy (dlts) Minority carrier life time Silicon diode |
| ISSN号 | 1001-8042 |
| DOI | 10.1007/s41365-017-0331-7 |
| 通讯作者 | Guo, chun-sheng(guocs@bjut.edu.cn) |
| 英文摘要 | Electron beams of 0.5, 1.5, 2.0, and 5.0 mev were used to irradiate n-si diodes to fluences of 5.5 x 10(13), 1.7 x 10(14), and 3.3 x 10(14) e cm(-2). the forward voltage drop, minority carrier lifetime, and deep level transient spectroscopy (dlts) characteristics of silicon pn junction diodes before and after irradiation were compared. at the fluence of 3.3 x 10(14) e cm(-2), the forward voltage drop increased from 1.25 v at 0.5 mev to 7.96 v at 5.0 mev, while the minority carrier lifetime decreased significantly from 7.09 mu s at 0.5 mev to 0.06 mu s at 5. 0 mev. six types of changes in the energy levels in dlts spectra were analyzed and discussed. |
| WOS关键词 | I-N-DIODE ; LIFETIME CONTROL ; SILICON ; IMPACT ; GAMMA ; SI |
| WOS研究方向 | Nuclear Science & Technology ; Physics |
| WOS类目 | Nuclear Science & Technology ; Physics, Nuclear |
| 语种 | 英语 |
| WOS记录号 | WOS:000417223300014 |
| 出版者 | SPRINGER SINGAPORE PTE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2177827 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Guo, Chun-Sheng |
| 作者单位 | 1.Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China 2.Wuxi EL Pont Grp, Wuxi 214151, Peoples R China 3.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Chun-Sheng,Wang, Ruo-Min,Zhang, Yu-Wei,et al. Identifying defect energy levels using dlts under different electron irradiation conditions[J]. Nuclear science and techniques,2017,28(12):7. |
| APA | Guo, Chun-Sheng,Wang, Ruo-Min,Zhang, Yu-Wei,Pei, Guo-Xi,Feng, Shi-Wei,&Li, Zhao-Xian.(2017).Identifying defect energy levels using dlts under different electron irradiation conditions.Nuclear science and techniques,28(12),7. |
| MLA | Guo, Chun-Sheng,et al."Identifying defect energy levels using dlts under different electron irradiation conditions".Nuclear science and techniques 28.12(2017):7. |
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来源：高能物理研究所
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