中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Identifying defect energy levels using dlts under different electron irradiation conditions

文献类型:期刊论文

作者Guo, Chun-Sheng1,2,3; Wang, Ruo-Min1; Zhang, Yu-Wei2; Pei, Guo-Xi3; Feng, Shi-Wei1; Li, Zhao-Xian2
刊名Nuclear science and techniques
出版日期2017-12-01
卷号28期号:12页码:7
关键词Electron irradiation Deep level transient spectroscopy (dlts) Minority carrier life time Silicon diode
ISSN号1001-8042
DOI10.1007/s41365-017-0331-7
通讯作者Guo, chun-sheng(guocs@bjut.edu.cn)
英文摘要Electron beams of 0.5, 1.5, 2.0, and 5.0 mev were used to irradiate n-si diodes to fluences of 5.5 x 10(13), 1.7 x 10(14), and 3.3 x 10(14) e cm(-2). the forward voltage drop, minority carrier lifetime, and deep level transient spectroscopy (dlts) characteristics of silicon pn junction diodes before and after irradiation were compared. at the fluence of 3.3 x 10(14) e cm(-2), the forward voltage drop increased from 1.25 v at 0.5 mev to 7.96 v at 5.0 mev, while the minority carrier lifetime decreased significantly from 7.09 mu s at 0.5 mev to 0.06 mu s at 5. 0 mev. six types of changes in the energy levels in dlts spectra were analyzed and discussed.
WOS关键词I-N-DIODE ; LIFETIME CONTROL ; SILICON ; IMPACT ; GAMMA ; SI
WOS研究方向Nuclear Science & Technology ; Physics
WOS类目Nuclear Science & Technology ; Physics, Nuclear
语种英语
WOS记录号WOS:000417223300014
出版者SPRINGER SINGAPORE PTE LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2177827
专题高能物理研究所
通讯作者Guo, Chun-Sheng
作者单位1.Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
2.Wuxi EL Pont Grp, Wuxi 214151, Peoples R China
3.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Guo, Chun-Sheng,Wang, Ruo-Min,Zhang, Yu-Wei,et al. Identifying defect energy levels using dlts under different electron irradiation conditions[J]. Nuclear science and techniques,2017,28(12):7.
APA Guo, Chun-Sheng,Wang, Ruo-Min,Zhang, Yu-Wei,Pei, Guo-Xi,Feng, Shi-Wei,&Li, Zhao-Xian.(2017).Identifying defect energy levels using dlts under different electron irradiation conditions.Nuclear science and techniques,28(12),7.
MLA Guo, Chun-Sheng,et al."Identifying defect energy levels using dlts under different electron irradiation conditions".Nuclear science and techniques 28.12(2017):7.

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来源:高能物理研究所

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