Room-temperature ferromagnetic enhancement and crossover of negative to positive magnetoresistance in n-doped in2o3 films
文献类型：期刊论文
| 作者 | Shen, Luhang1,2; An, Yukai1,2; Cao, Dandan1,2; Wu, Zhonghua3; Liu, Jiwen1,2 |
| 刊名 | Journal of physical chemistry c
 |
| 出版日期 | 2017-11-30 |
| 卷号 | 121期号:47页码:26499-26506 |
| ISSN号 | 1932-7447 |
| DOI | 10.1021/acs.jpcc.7b08732 |
| 通讯作者 | An, yukai(ykan@tjut.edu.cn) ; Liu, jiwen(jwliu@tjut.edu.cn) |
| 英文摘要 | The effects of n-induced acceptor defects on tuning optical, transport, and magnetic properties of in2o3 films fabricated by magnetron sputtering technique were investigated systematically by x-ray diffraction, x-ray photoelectron spectroscopy, uvvisible absorbance, hall effect, film resistivity (rho) versus temperature, magnetoresistance, and magnetic measurements. detailed structural analyses reveal that n-doped in2o3 films have a cubic bixbyite structure with the substitutional n defect at the o sites of in2o3 lattice. the n-doped in2o3 films display clear room-temperature ferromagnetic behavior and mott variable range-hopping transport behavior. with increasing n-doping concentration, the saturated magnetization of the films monotonically increases and the conductivity transforms into p-type. crossover of negative to positive magnetoresistance and a red shift of the optical band gap eg are also observed with n-doping. first-principles calculations show that the localized holes induced by n-doping can mediate the magnetic interaction by short-range n-1:p-in:d/p-n-2:p hybridization in n-doped in2o3 system. therefore, the intrinsic ferromagnetic ordering in n-doped in2o3 films can be attributed to pp interaction between n 2p orbitals, which causes a large zeeman-split effect to suppress the carriers hopping path, leading to formation of positive magnetoresistance. |
| WOS关键词 | THIN-FILMS ; MAGNETIC SEMICONDUCTORS ; OXIDE ; NANOCRYSTALS ; MODEL |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| WOS类目 | Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000417228500041 |
| 出版者 | AMER CHEMICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2177851 |
| 专题 | 高能物理研究所 |
| 通讯作者 | An, Yukai; Liu, Jiwen |
| 作者单位 | 1.Tianjin Univ Technol, Key Lab Display Mat & Photoelect Devices, Natl Demonstrat Ctr Expt Funct Mat Educ, Minist Educ,Tianjin Key Lab Photoelect Mat & Devi, Tianjin 300384, Peoples R China 2.Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R China 3.Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shen, Luhang,An, Yukai,Cao, Dandan,et al. Room-temperature ferromagnetic enhancement and crossover of negative to positive magnetoresistance in n-doped in2o3 films[J]. Journal of physical chemistry c,2017,121(47):26499-26506. |
| APA | Shen, Luhang,An, Yukai,Cao, Dandan,Wu, Zhonghua,&Liu, Jiwen.(2017).Room-temperature ferromagnetic enhancement and crossover of negative to positive magnetoresistance in n-doped in2o3 films.Journal of physical chemistry c,121(47),26499-26506. |
| MLA | Shen, Luhang,et al."Room-temperature ferromagnetic enhancement and crossover of negative to positive magnetoresistance in n-doped in2o3 films".Journal of physical chemistry c 121.47(2017):26499-26506. |
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