Interface chemistry and surface morphology evolution study for inas/al2o3 stacks upon in situ ultrahigh vacuum annealing
文献类型：期刊论文
| 作者 | Wang, Xinglu1; Qin, Xiaoye2; Wang, Wen1; Liu, Yue1; Shi, Xiaoran1; Sun, Yong1; Liu, Chen3; Zhao, Jiali3; Zhang, Guanhua4; Liu, Hui1 |
| 刊名 | Applied surface science
 |
| 出版日期 | 2018-06-15 |
| 卷号 | 443页码:567-574 |
| ISSN号 | 0169-4332 |
| 关键词 | Elemental diffusion Surface morphology High-k dielectrics Inas Thermal stability |
| DOI | 10.1016/j.apsusc.2018.03.009 |
| 通讯作者 | Dong, hong(donghong@nankai.edu.cn) |
| 英文摘要 | A systematic study of the interfacial chemistry for the hcl pretreated and native oxide inas(100) samples upon atomic layer deposition (ald) of al2o3, and the post deposition annealing (pda) process has been carried out, using in situ synchrotron radiation photoelectron spectroscopy. the "clean up" effect for the native oxide sample is detected, but it is not observed for the hcl pretreated sample. the out-diffusion and desorption of both in and as oxides have been characterized during the ald process and the following pda process. the surface morphology evolution during the pda process is studied by in situ photo-emission electron microscopy. the bubbles emerged after pda at 360 degrees c and grew up at 370 degrees c. after pda at 400 degrees c and at higher temperatures, pits are seen in some areas, and the tear up of the al2o3 film is seen in other areas with the formation of indium droplets. this study gives insight in the mechanism of elemental diffusion/desorption, which may associate the reliability of iii-v semiconductor based devices. (c) 2018 elsevier b.v. all rights reserved. |
| WOS关键词 | ATOMIC-LAYER-DEPOSITION ; SYNCHROTRON-RADIATION PHOTOEMISSION ; V COMPOUND SEMICONDUCTORS ; PASSIVATION ; ENERGY ; FILMS ; SCATTERING ; MOBILITY |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000428446300068 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2178135 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Dong, Hong |
| 作者单位 | 1.Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin 300071, Peoples R China 2.Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA 3.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China 5.Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Xinglu,Qin, Xiaoye,Wang, Wen,et al. Interface chemistry and surface morphology evolution study for inas/al2o3 stacks upon in situ ultrahigh vacuum annealing[J]. Applied surface science,2018,443:567-574. |
| APA | Wang, Xinglu.,Qin, Xiaoye.,Wang, Wen.,Liu, Yue.,Shi, Xiaoran.,...&Dong, Hong.(2018).Interface chemistry and surface morphology evolution study for inas/al2o3 stacks upon in situ ultrahigh vacuum annealing.Applied surface science,443,567-574. |
| MLA | Wang, Xinglu,et al."Interface chemistry and surface morphology evolution study for inas/al2o3 stacks upon in situ ultrahigh vacuum annealing".Applied surface science 443(2018):567-574. |
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来源：高能物理研究所
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