A general method for the chemical synthesis of large-scale, seamless transition metal dichalcogenide electronics
文献类型：期刊论文
| 作者 | Li, Li1,2; Guo, Yichuan1,2; Sun, Yuping3; Yang, Long4; Qin, Liang1,2; Guan, Shouliang1,2; Wang, Jinfen1,2; Qiu, Xiaohui1,2; Li, Hongbian1,2; Shang, Yuanyuan3 |
| 刊名 | Advanced materials
 |
| 出版日期 | 2018-03-22 |
| 卷号 | 30期号:12页码:9 |
| 关键词 | Carbon nanotubes Chemical vapor deposition Flexible electronics Heterostructures Transition metal dichalcogenides |
| ISSN号 | 0935-9648 |
| DOI | 10.1002/adma.201706215 |
| 通讯作者 | Li, hongbian(lihb@nanoctr.cn) ; Shang, yuanyuan(yuanyuanshang@zzu.edu.cn) ; Fang, ying(fangy@nanoctr.cn) |
| 英文摘要 | The capability to directly build atomically thin transition metal dichalcogenide (tmd) devices by chemical synthesis offers important opportunities to achieve large-scale electronics and optoelectronics with seamless interfaces. here, a general approach for the chemical synthesis of a variety of tmd (e.g., mos2, ws2, and mose2) device arrays over large areas is reported. during chemical vapor deposition, semiconducting tmd channels and metallic tmd/carbon nanotube (cnt) hybrid electrodes are simultaneously formed on cnt-patterned substrate, and then coalesce into seamless devices. chemically synthesized tmd devices exhibit attractive electrical and mechanical properties. it is demonstrated that chemically synthesized mos2-mos2/cnt devices have ohmic contacts between mos2/cnt hybrid electrodes and mos2 channels. in addition, mos2-mos2/cnt devices show greatly enhanced mechanical stability and photoresponsivity compared with conventional gold-contacted devices, which makes them suitable for flexible optoelectronics. accordingly, a highly flexible pixel array based on chemically synthesized mos2-mos2/cnt photodetectors is applied for image sensing. |
| WOS关键词 | SINGLE-LAYER MOS2 ; LARGE-AREA ; VAPOR-DEPOSITION ; ATOMIC LAYERS ; HIGH-QUALITY ; CARBON NANOTUBES ; GRAIN-BOUNDARY ; MONOLAYER MOS2 ; GRAPHENE FILMS ; GROWTH |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000428348000014 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2178171 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Li, Hongbian; Shang, Yuanyuan; Fang, Ying |
| 作者单位 | 1.Natl Ctr Nanosci & Technol, CAS Key Lab Biomed Effects Nanomat & Nanosafety, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Zhengzhou Univ, Sch Phys Engn, Zhengzhou 450052, Henan, Peoples R China 4.Univ Calif Los Angeles, Dept Neurobiol, David Geffen Sch Med, Los Angeles, CA 90095 USA 5.CAS Ctr Excellence Brain Sci & Intelligence Techn, 320 Yue Yang Rd, Shanghai 200031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Li,Guo, Yichuan,Sun, Yuping,et al. A general method for the chemical synthesis of large-scale, seamless transition metal dichalcogenide electronics[J]. Advanced materials,2018,30(12):9. |
| APA | Li, Li.,Guo, Yichuan.,Sun, Yuping.,Yang, Long.,Qin, Liang.,...&Fang, Ying.(2018).A general method for the chemical synthesis of large-scale, seamless transition metal dichalcogenide electronics.Advanced materials,30(12),9. |
| MLA | Li, Li,et al."A general method for the chemical synthesis of large-scale, seamless transition metal dichalcogenide electronics".Advanced materials 30.12(2018):9. |
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