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  4. 中科院固体物理研究所
Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary

文献类型：期刊论文

作者Li, Siqian1; Lei, Huaping2; Wang, Yi3; Ullah, Md Barkat4; Chen, Jun1; Avrutin, Vitaliy4; Ozgur, Umit4; Morkoc, Hadis4; Ruterana, Pierre1
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2018-10-31
卷号10期号:43页码:37651-37660
关键词ZnO/GaN heterointerface (0001) plane IDBs polarity control energetic stability 2DHG 2DEG
ISSN号1944-8244
DOI10.1021/acsami.8b12202
通讯作者Li, Siqian(siqian.li@ensicaen.fr)
英文摘要In semiconductor heterojunction, polarity critically governs the physical properties, with an impact on electronic or optoelectronic devices through the presence of pyroelectric and piezoelectric fields at the active heteropolar interface. In the present work, the abrupt O-polar ZnO/Ga-polar GaN heterointerface was successfully achieved by using high O/Zn ratio flux during the ZnO nucleation growth. Atomic-resolution high-angle annular dark-field and bright field transmission electron microscopy observation revealed that this polarity inversion confines within one monolayer by forming the (0001) plane inversion domain boundary (IDB) at the ZnO/GaN heterointerface. Through theoretical calculation and topology analysis, the geometry of this IDB was determined to possess an octahedral Ga atomic layer in the interface, with one O/N layer symmetrically bonded at the tetrahedral site. The computed electronic structure of all considered IDBs revealed a metallic character at the heterointerface. More interestingly, the presence of two-dimensional (2D) hole gas (2DHG) or 2D electron gas (2DEG) is uncovered by investigating the chemical bonding and charge transfer at the heterointerface. This work not only clarifies the polarity control and interfacial configuration of the O-polar ZnO/Ga-polar GaN heterojunction but, more importantly, also gives insight into their further application on heterojunction field-effect transistors as well as hybrid ZnO/GaN optoelectronic devices. Moreover, such polarity control at the monolayer scale might have practical implications for heterojunction devices based on other polar semiconductors.
WOS关键词TRANSIENT ELECTRON-TRANSPORT ; MOLECULAR-BEAM EPITAXY ; LIGHT-EMITTING DIODE ; OPTOELECTRONIC PROPERTIES ; ATOMIC-STRUCTURE ; STEADY-STATE ; GAN LAYERS ; ZINC-OXIDE ; THIN-FILM ; ZNO
资助项目CRIANN Centre Regional Informatique et d'Applications Numeriques de Normandie[2016009] ; China Scholarship Council[201508420147] ; National Science Foundation of China[11575230] ; Young Foundation of the director of Institute of Solid State Physics, Chinese Academy of Sciences[2016DFY23] ; Air Force Office of Scientific Research (AFOSR)[FA9550-12-1-0094]
WOS研究方向Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000449239600116
出版者AMER CHEMICAL SOC
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源URL[http://ir.hfcas.ac.cn:8080/handle/334002/34567]  
专题合肥物质科学研究院_中科院固体物理研究所
通讯作者Li, Siqian
作者单位1.ENSICAEN, UCBN, CEA, CIMAP,UMR 6252,CNRS, 6 Blvd Marechal Juin, F-14050 Caen, France
2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
3.Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany
4.Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA
推荐引用方式
GB/T 7714		 Li, Siqian,Lei, Huaping,Wang, Yi,et al. Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(43):37651-37660.
APA Li, Siqian.,Lei, Huaping.,Wang, Yi.,Ullah, Md Barkat.,Chen, Jun.,...&Ruterana, Pierre.(2018).Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary.ACS APPLIED MATERIALS & INTERFACES,10(43),37651-37660.
MLA Li, Siqian,et al."Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary".ACS APPLIED MATERIALS & INTERFACES 10.43(2018):37651-37660.

入库方式： OAI收割

来源：合肥物质科学研究院

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