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  4. 中科院等离子体物理研究所
Deposition of large area uniform diamond films by microwave plasma CVD

文献类型：期刊论文

作者Weng, J.1; Liu, F.1; Xiong, L. W.1; Wang, J. H.1,2; Sun, Q.1
刊名VACUUM
出版日期2018
卷号147页码:134-142
关键词Large area diamond film High microwave power Uniformity Microwave plasma Chemical vapor deposition
ISSN号0042-207X
DOI10.1016/j.vacuum.2017.10.026
通讯作者Liu, F.(smile_204@163.com)
英文摘要Diamond films with 70 mm in diameter were deposited on silicon substrates with Ar/CH4/H-2 gas mixture, using microwave plasma chemical vapor deposition (MPCVD) technique. One designed water-cooling substrate stage was used to improve the uniformity of the surface temperature across the substrate. An uniform substrate surface temperature was obtained at the pressure of 10 kPa when the input microwave power was 5500 W. The condition of the plasma was diagnosed by optical emission spectrum (OES) and the grown diamond films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The results show that higher microwave power can further improve the uniformity of the temperature distribution across the substrate which in turn increases the uniformity of diamond film. And introducing more H-2 into Ar/CH4/H-2 gas mixture at high microwave power is effective on the improvement of the quality and the decrease of the stress in the deposited diamond films. The diamond films with low average intrinsic stress of 0.32 GPa were finally deposited with introducing 100 sccm H-2 into AriCH(4)/H-2 gas mixture at 5500 W. (C) 2017 Elsevier Ltd. All rights reserved.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; DISCHARGE PLASMA ; REACTOR ; SUBSTRATE ; GROWTH ; MORPHOLOGY ; COATINGS ; MPCVD ; SPECTROSCOPY ; PARAMETERS
资助项目Natural Science Foundation of China[51402220] ; Science and Technology Research Program of Hubei Education Department[Q20151517] ; Research Fund of Wuhan Institute of Technology[K201506]
WOS研究方向Materials Science ; Physics
语种英语
WOS记录号WOS:000418976700019
出版者PERGAMON-ELSEVIER SCIENCE LTD
资助机构Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; Natural Science Foundation of China ; 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源URL[http://ir.hfcas.ac.cn:8080/handle/334002/35068]  
专题合肥物质科学研究院_中科院等离子体物理研究所
通讯作者Liu, F.
作者单位1.Wuhan Inst Technol, Key Lab Plasma Chem & Adv Mat Hubei Prov, Wuhan 430205, Hubei, Peoples R China
2.Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Anhui, Peoples R China
推荐引用方式
GB/T 7714		 Weng, J.,Liu, F.,Xiong, L. W.,et al. Deposition of large area uniform diamond films by microwave plasma CVD[J]. VACUUM,2018,147:134-142.
APA Weng, J.,Liu, F.,Xiong, L. W.,Wang, J. H.,&Sun, Q..(2018).Deposition of large area uniform diamond films by microwave plasma CVD.VACUUM,147,134-142.
MLA Weng, J.,et al."Deposition of large area uniform diamond films by microwave plasma CVD".VACUUM 147(2018):134-142.

入库方式： OAI收割

来源：合肥物质科学研究院

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