Characterization and performance of Cu( In, Ga)Se-2 thin films incorporating low-temperature pre-annealing process
文献类型：期刊论文
| 作者 | Zhang, Xiaoqing1,2; Huang, Yunxiang1; Yuan, Wei1; Tang, Yong1 |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2017-12-25 |
| 卷号 | 728页码:29-36 |
| ISSN号 | 0925-8388 |
| 关键词 | Cigs Solar Cell Low-temperature Pre-annealing Plasma-enhanced Selenization Thin Film |
| DOI | 10.1016/j.jallcom.2017.08.259 |
| 文献子类 | Article |
| 英文摘要 | This paper focuses on the characterization and performance evaluation of the Cu(In, Ga)Se-2 (CIGS) thin films fabricated using the low-temperature pre-annealing process, followed by the plasma-enhanced Se vapor selenization coupled with etching (PESVSE) and thermal-assisted Se vapor selenization (TASVS). The XPS data reveals that the increase of pre-annealing temperature can facilitate the diffusion of Ga towards the surface of CIGS thin film by stabilizing more Ga distribution on the surface of the annealed precursor. The PESVSE process can effectively increase Ga content on the film surface with the help of low-temperature pre-annealing process. Results also indicate that the PESVSE combined with a low-temperature pre-annealing process can significantly weaken and even eliminate the adverse phase separation to yield a single-phase CIGS thin film with a moderate Ga content. The PESVSE process helps to improve and even achieve a homogeneous depth distribution of Ga in the whole CIGS thin film in comparison with the TASVS process. The PESVSE process achieves a higher open circuit voltage and also higher conversion efficiency of CIGS solar cell treated by the low-temperature pre-annealing process. The feasibility of using this low-temperature pre-annealing method to make high-quality CIGS thin films for photovoltaic applications has been successfully validated in this work. (C) 2017 Elsevier B.V. All rights reserved. |
| WOS关键词 | CU(IN,GA)SE-2 SOLAR-CELLS ; SELENIZATION PROCESS ; SE VAPOR ; BARRIER LAYER ; PRECURSORS ; EFFICIENCY ; DIFFUSION ; MOSE2 ; PANEL |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE SA |
| WOS记录号 | WOS:000412818600004 |
| 资助机构 | National Natural Science Foundation of China(51475172) ; National Natural Science Foundation of China(51475172) ; Natural Science Foundation of Guangdong Province(2015A030306013 ; Natural Science Foundation of Guangdong Province(2015A030306013 ; key program of NSFC-Guangdong Joint Funds of China(U1401249) ; key program of NSFC-Guangdong Joint Funds of China(U1401249) ; 2014A030312017) ; 2014A030312017) ; National Natural Science Foundation of China(51475172) ; National Natural Science Foundation of China(51475172) ; Natural Science Foundation of Guangdong Province(2015A030306013 ; Natural Science Foundation of Guangdong Province(2015A030306013 ; key program of NSFC-Guangdong Joint Funds of China(U1401249) ; key program of NSFC-Guangdong Joint Funds of China(U1401249) ; 2014A030312017) ; 2014A030312017) |
| 源URL | [http://ir.giec.ac.cn/handle/344007/16386]  |
| 专题 | 中国科学院广州能源研究所 |
| 通讯作者 | Yuan, Wei |
| 作者单位 | 1.South China Univ Technol, Sch Mech & Automot Engn, Guangzhou 510640, Guangdong, Peoples R China 2.Chinese Acad Sci, Guangzhou Inst Energy Convers, Guangdong Key Lab New & Renewable Energy Res & De, Guangzhou 510640, Guangdong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Xiaoqing,Huang, Yunxiang,Yuan, Wei,et al. Characterization and performance of Cu( In, Ga)Se-2 thin films incorporating low-temperature pre-annealing process[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,728:29-36. |
| APA | Zhang, Xiaoqing,Huang, Yunxiang,Yuan, Wei,&Tang, Yong.(2017).Characterization and performance of Cu( In, Ga)Se-2 thin films incorporating low-temperature pre-annealing process.JOURNAL OF ALLOYS AND COMPOUNDS,728,29-36. |
| MLA | Zhang, Xiaoqing,et al."Characterization and performance of Cu( In, Ga)Se-2 thin films incorporating low-temperature pre-annealing process".JOURNAL OF ALLOYS AND COMPOUNDS 728(2017):29-36. |
入库方式： OAI收割
来源：广州能源研究所
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