Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs
文献类型：期刊论文
| 作者 | Liu, Lingguang1; Wang, Yaogong1; Lin, Yuanyuan1; Zhang, Xiaoning1; Kuo, Yue2; Tian, Jinshou3,4
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| 刊名 | Materials Science in Semiconductor Processing
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| 出版日期 | 2019-04 |
| 卷号 | 93页码:226-230 |
| ISSN号 | 13698001 |
| DOI | 10.1016/j.mssp.2019.01.010 |
| 产权排序 | 3 |
| 英文摘要 | Auxiliary structure of nano-pinnacle is prepared on silicon substrate of SSI-LEDs device, and the micro-structure properties, electrical and optical characteristics of the proposed structure device are investigated. Non-uniform size and geometry of nano-pinnacles are prepared by wet-etching, and the most frequent geometry is ~230 × 140 nm pyramids. With help of the nano-pinnacle structure, the electric field strength distributed on treated surface of the nano-pinnacle sample is enhanced by ~4 times, resulting in the increase of the density of conductive paths by 3.6 times. By exploring the electrical and optical results, the onset voltage of light emission is decreased by 60% from ? 7.6 V to ? 3.4 V, and the emission intensity and efficiency are improved by ~9 times and ~8 times, respectively compared with the traditional structure device of SSI-LEDs. ? 2019 Elsevier Ltd |
| 语种 | 英语 |
| 出版者 | Elsevier Ltd |
| 源URL | [http://ir.opt.ac.cn/handle/181661/31100]  |
| 专题 | 条纹相机工程中心 |
| 通讯作者 | Wang, Yaogong |
| 作者单位 | 1.Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an; 710049, China; 2.Thin Film Nano & Microelectronics Research Lab, Texas A&M University, College Station; TX; 77843-3122, United States; 3.Xi'an Institute of Optics and Precision Mechanics of CAS, Key Lab Transient Opt & Photon, Xi'an; 710119, China; 4.Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan; Shanxi; 030006, China |
| 推荐引用方式 GB/T 7714 | Liu, Lingguang,Wang, Yaogong,Lin, Yuanyuan,et al. Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs[J]. Materials Science in Semiconductor Processing,2019,93:226-230. |
| APA | Liu, Lingguang,Wang, Yaogong,Lin, Yuanyuan,Zhang, Xiaoning,Kuo, Yue,&Tian, Jinshou.(2019).Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs.Materials Science in Semiconductor Processing,93,226-230. |
| MLA | Liu, Lingguang,et al."Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs".Materials Science in Semiconductor Processing 93(2019):226-230. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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