Raman Spectroscopic Study on Silicon Films Prepared by Catalytic Chemical Vapor Deposition
文献类型：会议论文
| 作者 | Cheng SM(程士敏) ; Ren T(任通) ; Feng ZC(冯兆池) ; Ying PL(应品良) ; Li C(李灿) |
| 出版日期 | 2009-09-13 |
| 会议名称 | 第十三届亚洲化学会 |
| 会议日期 | 2009-9-13 |
| 会议地点 | china |
| 页码 | 129/1 |
| 通讯作者 | 李灿 |
| 中文摘要 | silicon films have been prepared by catalytic chemical vapor deposition (cat-cvd), which is often called hot-wire cvd. raman spectroscopy is very important to study silicon films. we have quantified the crystallinity of the silicon films using the intensity ratio xc=i~520cm-1/(i~480cm-1+i~520cm-1) by deconvoluting the transverse optical (to) phonon peak into a sharp peak around 520cm-1 and a broad band at 480cm-1 due to crystalline and amorphous phase, respectively. effect of the temperature of substrate (ts), distance between the filament and substrate (lfs) and the pressure of deposition process (p) on the silicon films have been investigated from the raman spectra, respectively (fig.1). when increase the ts, decrease the lfs, or increase the p, silicon films with higher crystallinity can be obtained controllably. the changes of the deposition parameters produce different gas-phase precursors for the films and the surface dynamics has been adjusted during the film growth. |
| 会议主办者 | chinese chemical society |
| 学科主题 | 物理化学 |
| 语种 | 中文 |
| 源URL | [http://159.226.238.44/handle/321008/113826]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 推荐引用方式 GB/T 7714 | Cheng SM,Ren T,Feng ZC,et al. Raman Spectroscopic Study on Silicon Films Prepared by Catalytic Chemical Vapor Deposition[C]. 见:第十三届亚洲化学会. china. 2009-9-13. |
入库方式： OAI收割
来源：大连化学物理研究所
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