中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A Molecular Dynamics Simulation: the Effect of Finite Size on the Thermal Conductivity in a Single Crystal Silicon

文献类型:期刊论文

作者Tang QH(汤奇恒)
刊名Molecular Physics
出版日期2004
卷号102期号:18页码:1959-1964
通讯作者邮箱qhtang@lnm.imech.ac.cn
ISSN号0026-8976
通讯作者Tang, QH (reprint author), Chinese Acad Sci, Inst Mech, LNM, Beijing 100080, Peoples R China.
中文摘要Non-equilibrium molecular dynamics (NEMD) simulations are performed to calculate thermal conductivity. The environment-dependent interatomic potential (EDIP) potential on crystal silicon is adopted as a model system. The issues are related to nonlinear response, local thermal equilibrium and statistical averaging. The simulation results by non-equilibrium molecular dynamics show that the calculated thermal conductivity decreases almost linearly as the film thickness reduced at the nanometre scale. The effect of size on the thermal conductivity is also obtained by a theoretic analysis of the kinetic theory and formulas of the heat capacity. The analysis reveals that the contributions of phonon mean free path (MFP) and phonon number in a finite cell to thermal conductivity are very important.
学科主题力学
类目[WOS]Physics, Atomic, Molecular & Chemical
研究领域[WOS]Physics
关键词[WOS]THIN-FILMS ; KAPITZA RESISTANCE ; TRANSPORT ; SCATTERING ; PHASES ; ORDER
收录类别SCI ; EI
语种英语
WOS记录号WOS:000225405100008
公开日期2007-06-15 ; 2007-12-05 ; 2009-06-23
源URL[http://dspace.imech.ac.cn/handle/311007/17658]  
专题力学研究所_力学所知识产出(1956-2008)
推荐引用方式
GB/T 7714
Tang QH. A Molecular Dynamics Simulation: the Effect of Finite Size on the Thermal Conductivity in a Single Crystal Silicon[J]. Molecular Physics,2004,102(18):1959-1964.
APA 汤奇恒.(2004).A Molecular Dynamics Simulation: the Effect of Finite Size on the Thermal Conductivity in a Single Crystal Silicon.Molecular Physics,102(18),1959-1964.
MLA 汤奇恒."A Molecular Dynamics Simulation: the Effect of Finite Size on the Thermal Conductivity in a Single Crystal Silicon".Molecular Physics 102.18(2004):1959-1964.

入库方式: OAI收割

来源:力学研究所

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