Magnetic Properties of Mn-Implanted n-Type Ge
文献类型：期刊论文
| 作者 | Liu LF; Chen NF(陈诺夫) ; Chen CL; Li YL; Yin ZG; Yang F
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2004 |
| 卷号 | 273期号:1-2页码:106-110 |
| 通讯作者邮箱 | lfliu@red.semi.ac.cn |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | Mn+ ions were implanted into n-type Ge(111) single crystal at room temperature at an energy of 100 keV with a dose of 3 x 1016 cm-2. Subsequent annealing was performed on the samples at 400 °C and 600 °C in a flowing nitrogen atmosphere. The magnetic properties of the samples have been investigated by alternating gradient magnetometer at room temperature. The compositional properties of the annealed samples were studied by Auger electron spectroscopy and the structural properties were analyzed by X-ray diffraction measurements. Magnetization measurements reveal room-temperature ferromagnetism for the annealed samples. The magnetic analysis supported by compositional and structural properties indicates that forming the diluted magnetic semiconductor (DMS) MnxGe1-x after annealing may account for the ferromagnetic behavior in the annealed samples. |
| 学科主题 | 力学 |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 关键词[WOS] | FERROMAGNETISM ; SEMICONDUCTOR ; MNXGE1-X |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000226021000013 |
| 公开日期 | 2007-06-15 ; 2007-12-05 ; 2009-06-23 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/17684]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Liu LF,Chen NF,Chen CL,et al. Magnetic Properties of Mn-Implanted n-Type Ge[J]. Journal of Crystal Growth,2004,273(1-2):106-110. |
| APA | Liu LF,陈诺夫,Chen CL,Li YL,Yin ZG,&Yang F.(2004).Magnetic Properties of Mn-Implanted n-Type Ge.Journal of Crystal Growth,273(1-2),106-110. |
| MLA | Liu LF,et al."Magnetic Properties of Mn-Implanted n-Type Ge".Journal of Crystal Growth 273.1-2(2004):106-110. |
入库方式： OAI收割
来源：力学研究所
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