Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si
文献类型:期刊论文
作者 | Li, Zengcheng(李增成)![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
刊名 | LIGHT-SCIENCE & APPLICATIONS
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出版日期 | 2018 |
其他题名 | Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si |
语种 | 英语 |
源URL | [http://ir.sinano.ac.cn/handle/332007/5976] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队 |
作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
推荐引用方式 GB/T 7714 | Li, Zengcheng,Li, Deyao,Zhang, Shuming,et al. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si[J]. LIGHT-SCIENCE & APPLICATIONS,2018. |
APA | Li, Zengcheng.,Li, Deyao.,Zhang, Shuming.,Yang, Hui.,Ikeda, Masao.,...&Li, Dabing.(2018).Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si.LIGHT-SCIENCE & APPLICATIONS. |
MLA | Li, Zengcheng,et al."Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si".LIGHT-SCIENCE & APPLICATIONS (2018). |
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