中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si

文献类型:期刊论文

作者Li, Dabing; Yang, Hui(杨辉); Zheng, Xinhe; Ikeda, Masao; Wang, Huaibing(王怀兵); Liu, Jianping(刘建平); Zhang, Liqun(张立群); Li, Deyao(李德尧); Zhang, Shuming(张书明); Zhou, Yu(周宇)
刊名ACS PHOTONICS
出版日期2018
其他题名Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/6054]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队
作者单位中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式
GB/T 7714
Li, Dabing,Yang, Hui,Zheng, Xinhe,et al. Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si[J]. ACS PHOTONICS,2018.
APA Li, Dabing.,Yang, Hui.,Zheng, Xinhe.,Ikeda, Masao.,Wang, Huaibing.,...&Feng, Meixin.(2018).Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si.ACS PHOTONICS.
MLA Li, Dabing,et al."Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si".ACS PHOTONICS (2018).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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